http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Raethar, Mumtaj Begam Kassim (검색결과 4 건)
- 무료
- 기관 내 무료
- 유료
-
Review on Magnetic Components: Design & Consideration in VHF Circuit Applications
Yahaya, Nor Zaihar,Raethar, Mumtaj Begam Kassim,Awan, Mohammad The Korean Institute of Power Electronics 2009 JOURNAL OF POWER ELECTRONICS Vol.9 No.2
When converters operate in megahertz range, the passive components and magnetic devices generate high losses. However, the eddy current issues and choices of magnetic cores significantly affect on the design stage. Apart from that, the components' reduction, miniaturization technique and frequency scaling are required as well as improvement in thermal capability, integration technique, circuit topologies and PCB layout optimization. In transformer design, the winding and core losses give great attention to the design stage. From simulation work, it is found that E-25066 material manufactured by AVX could be the most suitable core for high frequency transformer design. By employing planar geometry topology, the material can generate significant power loss savings of more than 67% compared to other materials studied in this work. Furthermore, young researchers can use this information to develop new approaches based on concepts, issues and methodology in the design of magnetic components for high frequency applications.
-
Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications
Yahaya, Nor Zaihar,Raethar, Mumtaj Begam Kassim,Awan, Mohammad The Korean Institute of Power Electronics 2009 JOURNAL OF POWER ELECTRONICS Vol.9 No.1
This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.
-
Nor Zaihar Yahaya,Mumtaj Begam Kassim Raethar,Mohammad Awan 전력전자학회 2009 JOURNAL OF POWER ELECTRONICS Vol.9 No.2
When converters operate in megahertz range, the passive components and magnetic devices generate high losses. However, the eddy current issues and choices of magnetic cores significantly affect on the design stage. Apart from that, the components’ reduction, miniaturization technique and frequency scaling are required as well as improvement in thermal capability, integration technique, circuit topologies and PCB layout optimization. In transformer design, the winding and core losses give great attention to the design stage. From simulation work, it is found that E-25066 material manufactured by AVX could be the most suitable core for high frequency transformer design. By employing planar geometry topology, the material can generate significant power loss savings of more than 67% compared to other materials studied in this work. Furthermore, young researchers can use this information to develop new approaches based on concepts, issues and methodology in the design of magnetic components for high frequency applications.
-
Review on Gallium Nitride HEMT Device Technology for High Frequency Converter Applications
Nor Zaihar Yahaya,Mumtaj Begam Kassim Raethar,Mohammad Awan 전력전자학회 2009 JOURNAL OF POWER ELECTRONICS Vol.9 No.1
This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device’s capability and characteristics in applications using the GaN power converter design.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
