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RISS 인기검색어
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- 저자 : Pourtois, Geoffrey (검색결과 2 건)
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Cho, Moonju,Degraeve, Robin,Pourtois, Geoffrey,Delabie, Annelies,Ragnarsson, Lars-ke,Kauerauf, Thomas,Groeseneken, Guido,De Gendt, Stefan,Heyns, Marc,Hwang, Cheol Seong IEEE 2007 IEEE transactions on electron devices Vol.54 No.4
<P>Atomic layer deposition (ALD) with HfCl<SUB>4</SUB> as a precursor is widely used for HfO<SUB>2</SUB> fabrication. Due to the nature of the precursor under study, i.e., HfCl<SUB>4</SUB> and H<SUB>2</SUB>O, the presence of chlorine residues in the film due to insufficient hydrolysis is eminent. Obviously, the chlorine residue in the HfO<SUB>2</SUB> film is suspected to affect the quality of the HfO<SUB>2</SUB> film. In this paper, The authors reduced the concentration of chlorine residues by increasing the H<SUB>2</SUB>O oxidant pulse time in between the deposition cycles from 0.3 to 10 and 90 s. Time-of-flight secondary ion mass spectrometry analysis shows that this decreases the chlorine concentration in the HfO<SUB>2</SUB> film by more than one order of magnitude. However, time-dependent dielectric breakdown analysis shows that the lifetime remains quasi unaffected (within identical error bars) for the different injection cycles. Charge pumping analysis was done by varying both pulse frequency and amplitude to investigate the creation of defects, but negligible differences were observed. Therefore, the presence of chlorine residues has no significant impact on the trap generation and reliability of ALD HfO<SUB>2</SUB> layers, and this result corresponded with the mobility result. The experimental picture is confirmed with first-principle calculations that show that the presence of chlorine residues does not induce defect levels in the bandgap of HfO<SUB>2</SUB></P>
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Capturing Wetting States in Nanopatterned Silicon
Xu, XiuMei,Vereecke, Guy,Chen, Chang,Pourtois, Geoffrey,Armini, Silvia,Verellen, Niels,Tsai, Wei-Kang,Kim, Dong-Wook,Lee, Eunsongyi,Lin, Chang-You,Van Dorpe, Pol,Struyf, Herbert,Holsteyns, Frank,Moshc American Chemical Society 2014 ACS NANO Vol.8 No.1
<P>Spectacular progress in developing advanced Si circuits with reduced size, along the track of Moore’s law, has been relying on necessary developments in wet cleaning of nanopatterned Si wafers to provide contaminant free surfaces. The most efficient cleaning is achieved when complete wetting can be realized. In this work, ordered arrays of silicon nanopillars on a hitherto unexplored small scale have been used to study the wetting behavior on nanomodulated surfaces in a substantial range of surface treatments and geometrical parameters. With the use of optical reflectance measurements, the nanoscale water imbibition depths have been measured and the transition to the superhydrophobic Cassie–Baxter state has been accurately determined. For pillars of high aspect ratio (about 15), the transition occurs even when the surface is grafted with a hydrophilic functional group. We have found a striking consistent deviation between the contact angle measurements and the straightforward application of the classical wetting models. Molecular dynamics simulations show that these deviations can be attributed to the long overlooked atomic-scale surface perturbations that are introduced during the nanofabrication process. When the transition condition is approached, transient states of partial imbibition that characterize intermediate states between the Wenzel and Cassie–Baxter states are revealed in our experiments.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2014/ancac3.2014.8.issue-1/nn405621w/production/images/medium/nn-2013-05621w_0009.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn405621w'>ACS Electronic Supporting Info</A></P>
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