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Radiation damage effects in Ga<sub>2</sub>O<sub>3</sub> materials and devices
Kim, Jihyun,Pearton, Stephen J.,Fares, Chaker,Yang, Jiancheng,Ren, Fan,Kim, Suhyun,Polyakov, Alexander Y. The Royal Society of Chemistry 2019 Journal of Materials Chemistry C Vol.7 No.1
<P>The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.</P>
High rate dry etching of Si in fluorine-based inductively coupled plasmas
Cho, Hyun,Pearton, S.J. The Korea Association of Crystal Growth 2004 한국결정성장학회지 Vol.14 No.5
Four different Fluorine-based gases ($SF_6/,NF_3, PF_5,\; and \; BF_3$) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to ~8$\mu\textrm{m}$/min were achieved with pure $SF_6$ discharges at high source power (1500 W) and pressure (35 mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order $BF_3$ < $NF_3$< $PF_5$ < $SF_6$. This is in good correlation with the average bond energies of the gases, except for $NF_3$, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated $NF_3$, but the etched Si surface morphologies were significantly worse with this gas than with the other 3 gases.
Two-Dimensionally Layered p-Black Phosphorus/n-MoS<sub>2</sub>/p-Black Phosphorus Heterojunctions
Lee, Geonyeop,Pearton, Stephen J.,Ren, Fan,Kim, Jihyun American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.12
<P>Layered heterojunctions are widely applied as fundamental building blocks for semiconductor devices. For the construction of nanoelectronic and nanophotonic devices, the implementation of two-dimensional materials (2DMs) is essential. However, studies of junction devices composed of 2DMs are still largely focused on single p-n junction devices. In this study, we demonstrate a novel pnp double heterojunction fabricated by the vertical stacking of 2DMs (black phosphorus (BP) and MoS<SUB>2</SUB>) using dry-transfer techniques and the formation of high-quality p-n heterojunctions between the BP and MoS<SUB>2</SUB> in the vertically stacked BP/MoS<SUB>2</SUB>/BP structure. The pnp double heterojunctions allowed us to modulate the output currents by controlling the input current. These results can be applied for the fabrication of advanced heterojunction devices composed of 2DMs for nano(opto)electronics.</P> [FIG OMISSION]</BR>
Laser ablation of via holes in GaN and AlGaN∕GaN high electron mobility transistor structures
Anderson, Travis,Ren, Fan,Pearton, Stephen J.,Mastro, Michael A.,Holm, Ron T.,Henry, Rich L.,Eddy, Charles R.,Lee, Joon Yeob,Lee, Kwan-Young,Kim, Jihyun American Vacuum Society 2006 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B - Vol.24 No.5
Size-dependent electrical conductivity of indium zinc oxide deposited by RF magnetron sputtering.
Heo, Young-Woo,Pearton, S J,Norton, D P American Scientific Publishers 2012 Journal of Nanoscience and Nanotechnology Vol.12 No.4
<P>We investigated the size-dependent electrical conductivities of indium zinc oxide stripes with different widths from 50 nm to 4 microm and with the same thickness of 50 nm deposited by RF magnetron sputtering. The size of the indium zinc oxide stripes was controlled by e-beam lithography. The distance of the two Ti/Au Ohmic electrodes along the indium zinc oxide stripes was kept constant at 25 microm. The electrical conductivity decreased as the size of the indium zinc oxide stripes decreased below a critical width (80 nm). The activation energy, derived from the electric conductivity versus temperature measurement, was dependent on the dimensions of indium zinc oxide stripes. These results can be understood as stemming from surface charge trapping from the absorption of oxygen and/or water vapor, which leads to an increase in the energy difference between the conduction energy band and the Fermi energy.</P>
L. C. TIEN,S. J. PEARTON,B. S. KANG,D. P. NORTON,Y. W. HEO,F. REN 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2007 NANO Vol.2 No.4
ZnO has properties well-suited to UV/visible light emitters, transparent thin film electronics and a variety of gas and chemical sensor applications. There has been extensive interest in recent times in synthesis of ZnO nanowires by a number of methods using both catalyst and catalyst-free approaches. In this paper we review our recent results on developing functional nanowires in the ZnMgO systems and show some applications in hydrogen gas sensing, pH sensing, transparent transistors and UV detectors. In terms of sensors, the main selling points are large surface-to-volume ratio for improved detection sensitivity and also low power requirements.
High Breakdown Voltage (−201) <tex> $\beta $</tex> -Ga2O3 Schottky Rectifiers
Yang, Jiancheng,Ahn, Shihyun,Ren, F.,Pearton, S. J.,Jang, Soohwan,Kuramata, A. IEEE 2017 IEEE electron device letters Vol.38 No.7
<P>beta-Ga2O3 Schottky barrier diodes were fabricated in a vertical geometry structure consisting of Ni/Au rectifying contacts without edge termination on Si-doped epitaxial layers (10 mu m, n similar to 4x10(15) cm(-3)) on Sn-doped bulk Ga2O3 substrates with full-area Ti/Au back Ohmic contacts. The reverse breakdown voltage, V-BR, was a function of rectifying contact area, ranging from 1600 V at 3.1x10(-6) cm(2) (20-mu mdiameter) to similar to 250V at 2.2x10(-3) cm(-2) (0.53-mm diameter). The current density near breakdown was not strongly dependent on contact circumference but did scale with contact area, indicating that the bulk current contributionwas dominant. The lowest ON-state resistance, R-on, was 1.6 m Omega.cm(2) for the largest diode and 25 m Omega.cm(2) for the 1600-V rectifier, leading to a Baliga figure-of-merit (V-BR(2)/R-on) for the latter of approximately 102.4 MW.cm(-2). The ON-OFF ratio was measured at a forward voltage of 1.3 V and ranged from 3x10(7) to 2.5x10(6) for reverse biases from -5 to -40 V and showed only a small dependence on temperature in the range from 25 degrees C to 100 degrees C.</P>