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Fabrication of 30 nm pitch imprint moulds by frequency doubling for nanowire arrays
Yu, Zhaoning,Wu, Wei,Jung, Gun-Young,Olynick, D L,Straznicky, J,Li, Xuema,Li, Zhiyong,Tong, William M,Liddle, J A,Wang, Shih-Yuan,Stanley Williams, R IOP Pub 2006 Nanotechnology Vol.17 No.19
<P>We report the fabrication of 30 nm pitch nanowire array imprint moulds by spatial frequency doubling a 60 nm pitch array generated by electron beam lithography. We have successfully fabricated nanowire arrays at a 30 nm pitch, which is targeted for the year 2020 by the International Technology Roadmap for Semiconductors, with an average line-width of 17 nm and a 3σ line width roughness (LWR) of 4.0 nm. In contrast to previously reported procedures, our spatial frequency doubling technique produces electrically isolated nanowires that are appropriate for crossbar circuits. </P>
Liang, Xiaogan,Jung, Yeon-Sik,Wu, Shiwei,Ismach, Ariel,Olynick, Deirdre L.,Cabrini, Stefano,Bokor, Jeffrey American Chemical Society 2010 NANO LETTERS Vol.10 No.7
<P>We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width. The fabrication combines nanoimprint lithography, block-copolymer self-assembly for high-resolution nanoimprint template patterning, and electrostatic printing of graphene. Graphene field-effect transistors (GFETs) made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature. We observed multiplateaus in the drain current−gate voltage dependence as well as an enhancement of ON/OFF current ratio with reduction of the average ribbon width of GNMs. These effects are attributed to the formation of electronic subbands and a bandgap in GNMs. Such mesoscopic graphene structures and the nanofabrication methods could be employed to construct future electronic devices based on graphene superlattices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-7/nl100750v/production/images/medium/nl-2010-00750v_0005.gif'></P>
Liang, Xiaogan,Chen, Teresa,Jung, Yeon-Sik,Miyamoto, Yoshikazu,Han, Gang,Cabrini, Stefano,Ma, Biwu,Olynick, Deirdre L. American Chemical Society 2010 ACS NANO Vol.4 No.5
<P>We present a systematic study on the thermal nanoimprinting of a boron subphthalocynamine molecule, 2-allylphenoxy-(subphthalocyaninato)boron(III) (SubPc-A), which represents a class of attractive small-molecular weight organic compounds for organic-based photovoltaics (OPV). The final equilibrium imprinted feature profile strongly depends on the imprinting temperature. The highest feature aspect ratio (or contrast) occurs at a specific window of imprinting temperatures (80−90 °C). X-ray diffraction indicates that the nanoimprint at such a temperature window can induce high-degree molecular stacking, which can help stabilize the imprinted features. Outside this window, we observed a pronounced relaxation of imprinted features after template removal, which is attributed to the surface diffusion. Key factors affecting the final equilibrium profile of the imprinted features were simulated. From the simulation, it was found that the crystallization-induced anisotropy of surface energy stabilized imprinted features. Simulated parameters such as stable feature aspect ratio and pitch agree well with experimental data. Such work provides an important guideline for optimizing the nanopatterning of small-molecular-weight organic compounds.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2010/ancac3.2010.4.issue-5/nn100075t/production/images/medium/nn-2010-00075t_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn100075t'>ACS Electronic Supporting Info</A></P>