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RISS 인기검색어
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- 저자 : Ngasepam Monica Devi (검색결과 2 건)
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Analysis of Pull-in-Voltage and Figure-of-Merit of Capacitive MEMS Switch
Saha, Rajesh,Maity, Santanu,Devi, Ngasepam Monica,Bhunia, Chandan Tilak The Korean Institute of Electrical and Electronic 2016 Transactions on Electrical and Electronic Material Vol.17 No.3
Theoretical and graphical analysis of pull-in-voltage and figure of merit for a fixed-fixed capacitive Micro Electromechanical Systems (MEMS) switch is presented in this paper. MEMS switch consists of a thin electrode called bridge suspended over a central line and both ends of the bridge are fixed at the ground planes of a coplanar waveguide (CPW) structure. A thin layer of dielectric material is deposited between the bridge and centre conductor to avoid stiction and provide low impedance path between the electrodes. When an actuation voltage is applied between the electrodes, the metal bridge acquires pull in effect as it crosses one third of distance between them. In this study, we describe behavior of pull-in voltage and figure of merit (or capacitance ratio) of capacitive MEMS switch for five different dielectric materials. The effects of dielectric thicknesses are also considered to calculate the values of pull-in-voltage and capacitance ratio. This work shows that a reduced pull-in-voltage with increase in capacitance ratio can be achieved by using dielectric material of high dielectric constant above the central line of CPW.
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Analysis of Pull-in-Voltage and Figure-of-Merit of Capacitive MEMS Switch
Santanu Maity,Rajesh Saha,Ngasepam Monica Devi,Chandan Tilak Bhunia 한국전기전자재료학회 2016 Transactions on Electrical and Electronic Material Vol.17 No.3
Theoretical and graphical analysis of pull-in-voltage and figure of merit for a fixed-fixed capacitive MicroElectromechanical Systems (MEMS) switch is presented in this paper. MEMS switch consists of a thin electrodecalled bridge suspended over a central line and both ends of the bridge are fixed at the ground planes of a coplanarwaveguide (CPW) structure. A thin layer of dielectric material is deposited between the bridge and centre conductorto avoid stiction and provide low impedance path between the electrodes. When an actuation voltage is appliedbetween the electrodes, the metal bridge acquires pull in effect as it crosses one third of distance between them. Inthis study, we describe behavior of pull-in voltage and figure of merit (or capacitance ratio) of capacitive MEMS switchfor five different dielectric materials. The effects of dielectric thicknesses are also considered to calculate the valuesof pull-in-voltage and capacitance ratio. This work shows that a reduced pull-in-voltage with increase in capacitanceratio can be achieved by using dielectric material of high dielectric constant above the central line of CPW.
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