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Effect of intrinsic ZnO thickness on the performance of SnS/CdS-based thin-film solar cells
Yadav Rahul Kumar,Pawar Pravin S.,Neerugatti KrishnaRao Eswar,Nandi Raju,조재유,허재영 한국물리학회 2021 Current Applied Physics Vol.31 No.-
Tin monosulfide (SnS) has promising properties as an absorber material for thin-film solar cells (TFSCs). SnS/ CdS-based TFSCs have the following device structure: SLG/Mo/SnS/CdS/i-ZnO/AZO/Al. The optimization of thickness of intrinsic zinc oxide (i-ZnO) for SnS-absorber layers and its impact on SnS/CdS heterojunction TFSCs has been investigated at different thicknesses ranging from 39 nm to 73 nm. With the increase in thickness of i- ZnO from 39 nm to 45 nm, the overall performance improved. The highest PCE of 3.50% (with VOC of 0.334 V, JSC of 18.9 mA cm 2, and FF of 55.5%) was observed for 45 nm-thick i-ZnO layers. Upon a further increase in the i-ZnO thickness to 73 nm, the device performance deteriorated, indicating that the optimum thickness of the i- ZnO is 45 nm. The device performances were analyzed comprehensively for different i-ZnO thicknesses.