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Generation of nitridated silicon nanoparticles and the application to solar cell
G. Uchida,Y. Kawashima,K. Yamamoto,M. Sato,K. Kamataki,N. Itagaki,K. Koga,M. Shiratani 한국표면공학회 2010 한국표면공학회 학술발표회 초록집 Vol.2010 No.11
Semiconductor nanocrystals have attracted much attention as materials for multiple-exciton generation (MEG) photovoltaics. Surface modification of such nanocrystals is important to make quantum well structure for efficient MEG as well as to extract photo-generated carriers from nanocrystals. In this study, nitridated silicon particles were produced by SiH₄/H₂/N₂ PECVD, where generation of silicon particles and their surface nitridation were independently controlled using two multi-hollow discharges. We observed strong photoluminescence (PL) emission in an energy range of 1.9 to 2.4 eV from Si particle, which may be explained by a quantum-confinement effect of silicon particles embedded in the thin film.