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댐, 저수지 관리주체별 DB 구축 및 관련법령 현황 소개
송명훈 ( Song¸ Myeonghun ) 한국구조물진단유지관리공학회 2020 한국구조물진단유지관리공학회 학술발표대회 논문집 Vol.24 No.2
국가 기반시설을 생애주기 관점에서 계획적 · 선제적으로 관리하고 소요 재원의 확보 근거를 마련하고자 「지속가능한 기반시설 관리 기본법(이하 “기반시설관리법”)」이 제정(’18.12.31.) 시행(’20.1.1)되었다. 본 법은 국가 주요 기반시설 15종 시설에 대한 유지관리체계의 핵심권한을 기존의 개별적 관리주체 중심에서 ‘관리감독기관의 장’ 및 ‘기반시설관리위원회’로 상향하여 일관성을 기하고 통합 관리함으로써 국민이 보다 안전하고 편리하게 기반시설을 활용하는 것에 목적을 두고 있다. 기반시설관리법에 의한 통합 DB의 구축을 위해서는 기반시설의 실태조사와 더불어 관리체계 및 법령 등에 따른 유지관리 정보를 총괄적으로 취합·분석하여 통일된 관리방향을 제시할 필요가 있으며, 이를 위해 15종 중 방재시설 댐.저수지의 표준화 체계 구축과 정형/비정형 정보의 전산화 등을 통한 DB 구축과 축적된 자료의 정확성 제고, 유지관리 방안 등의 마련이 필요하다.
Song, Myeonghun,Jeong, Minki,Kang, Byeongki,Lee, Soonchil,Ueno, Tomohiro,Matsubara, Akira,Mizusaki, Takao,Fujii, Yutaka,Mitsudo, Seitaro,Chiba, Meiro IOP Pub 2010 Journal of Physics, Condensed Matter Vol.22 No.20
<P>We present the spin dynamics of isolated donor electrons in phosphorus-doped silicon at low temperature and in a high magnetic field. We performed a steady-state electron spin resonance (ESR) on the sample with a dopant concentration of 6.5 × 10<SUP>16</SUP> cm<SUP> − 3</SUP> in a high field of 2.87 T (80 GHz) and at temperatures from 48 down to 1.8 K. As the temperature decreases below 16 K, the resonance spectral line changes from the usual derivative form characteristic of absorptions. Very long spin–lattice relaxation time <I>T</I><SUB>1</SUB> at low temperature gives rise to rapid passage effects and results in a dramatic change in the line shape and intensity as a function of temperature. We show that the numerical analysis based on the passage effects well explains the observed spectral changes with temperature. The spin–lattice relaxation time <I>T</I><SUB>1</SUB> is derived by numerical fit to the experimental data. We discuss the dynamic nuclear polarization of <SUP>31</SUP>P nuclear spins which shows up as asymmetric intensities of the hyperfine-split ESR resonance lines.</P>
농업용 저수지 정보관리 표준화 및 성능개선 유형과 대상 선정 방안
송명훈 ( Song Myeonghun ),이백 ( Lee Baeg ) 한국구조물진단유지관리공학회 2021 한국구조물진단유지관리공학회 학술발표대회 논문집 Vol.25 No.2
노후화되어 가고 있는 저수지 시설의 유지관리 및 시설개선 방향으로 농림부는 ‘제1차 농업용 저수지 관리계획’을 수립하여, 각종 재해에도 안전하게 저수지를 관리하기 위한 향후 ′25년까지의 중장기계획을 추진하고, 지속가능한 안전관리 제도개선으로 「농업용 저수지 성능개선기준」을 마련하여, 노후화, 기준변화, 사용성변화 등에 따른 원상복구보다 가치증진이나 수명연장이 필요한 성능개선 검토 대상을 구분하고, 성능개선의 적합성에 대한 평가 방법을 규정하였다. 기반시설관리법의 이행기반을 마련하기 위한 ‘인프라 총조사사업’에서 저수지 시설의 관리를 위한 도구로 저수지 성능개선 검토 대상 선정과 적합성을 평가하기 위한 현황정보를 수집, 조사, 도출하고, 지속적인 현행화와 데이터 표준화를 통하여 의사결정 자료로 사용될 수 있도록 정보관리체계를 표준화하여, 성능개선 검토 유형을 구분하고 성능개선 적합성을 검토하기 위한 대상 선정 방안을 모색하였다.
Myeonghun U,Young-Joon Han,Sang-Hun Song,In-Tak Cho,Jong-Ho Lee,Hyuck-In Kwon 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.5
We have investigated the gate insulator effects on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs). Various SnO TFTs are fabricated with different gate insulators of a thermal SiO₂, a plasma-enhanced chemical vapor deposition (PECVD) SiNx, a 150 ℃-deposited PEVCD SiOx, and a 300 ℃-deposited PECVD SiOx. Among the devices, the one with the 150℃-deposited PEVCD SiOx exhibits the best electrical performance including a high field-effect mobility (=4.86 cm²/Vs), a small subthreshold swing (=0.7 V/decade), and a turn-on voltage around 0 (V). Based on the X-ray diffraction data and the localizedtrap-states model, the reduced carrier concentration and the increased carrier mobility due to the small grain size of the SnO thin-film are considered as possible mechanisms, resulting in its high electrical performance.
U, Myeonghun,Han, Young-Joon,Song, Sang-Hun,Cho, In-Tak,Lee, Jong-Ho,Kwon, Hyuck-In The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.5
We have investigated the gate insulator effects on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs). Various SnO TFTs are fabricated with different gate insulators of a thermal $SiO_2$, a plasma-enhanced chemical vapor deposition (PECVD) $SiO_x$, a $150^{\circ}C$-deposited PEVCD $SiO_x$, and a $300^{\circ}C$-deposited PECVD $SiO_x$. Among the devices, the one with the $150^{\circ}C$-deposited PEVCD $SiO_x$ exhibits the best electrical performance including a high field-effect mobility ($=4.86cm^2/Vs$), a small subthreshold swing (=0.7 V/decade), and a turn-on voltage around 0 (V). Based on the X-ray diffraction data and the localized-trap-states model, the reduced carrier concentration and the increased carrier mobility due to the small grain size of the SnO thin-film are considered as possible mechanisms, resulting in its high electrical performance.
Seo, Jooyeok,Song, Myeonghun,Jeong, Jaehoon,Nam, Sungho,Heo, Inseok,Park, Soo-Young,Kang, Inn-Kyu,Lee, Joon-Hyung,Kim, Hwajeong,Kim, Youngkyoo American Chemical Society 2016 ACS APPLIED MATERIALS & INTERFACES Vol.8 No.36
<P>We report broadband pH-sensing organic field-effect transistors (OFETs) with the polymer-dispersed liquid crystal (PDLC) sensing layers. The PDLC layers are prepared by spin-coating using ethanol solutions containing 4-cyano-4'-pentyl-biphenyl (503) and a diblock copolymer (PAA-b-PCBOA) that consists of LC-philic block [poly(4-cyanobiphenyl-4-oxyundecyl acrylate) (PCBOA)] and acrylic acid block [poly(acrylic acid) (PAA)]. The spin-coated sensing layers feature of SOB microdoniains (<5 mu m) encapsulated by the PAA-b-PCBOA polymer chains: The resulting LC-integrated-OFETs (PDLC-i-OFETs) can detect precisely and reproducibly a wide range of pH with only small amounts (10-40 mu L) of analyte solutions in both static and dynamic perfusion modes. The positive drain current change is measured for acidic solutions (pH < 7), whereas basic solutions (pH > 7) result in the negative change of drain current. The drain current trend in the present PDLC-i-OFET devices is explained by the shrinking expanding mechanism of the PAA chains in the diblock copolymer layers.</P>
Effects of air-annealing on the electrical properties of p-type tin monoxide thin-film transistors
Cho, In-Tak,U, Myeonghun,Song, Sang-Hun,Lee, Jong-Ho,Kwon, Hyuck-In Institute of Physics 2014 Semiconductor science and technology Vol.29 No.4
<P>We have investigated the effects of air-annealing on the electrical performance of the p-type tin oxide thin-film transistors (TFTs). The air-annealing of the tin oxide thin-film was made using a mini furnace at various temperatures. From the x-ray photoelectron spectroscopy (XPS) and x-ray diffraction (XRD) data, it is demonstrated that the phase of tin oxide partially transforms from SnO to SnO<SUB>2</SUB> with an air-annealing process, and it accelerates as the annealing temperature increases. The electrical performance of the p-type tin oxide TFT with a channel thickness of 25 nm exhibits much improved electrical performance when air-annealed at 230 °C for 1 h, but a decrease of the on-current is observed with an ambipolar operation in 260 and 290 °C air-annealed devices. Based on the XPS, XRD, and Hall measurement data, the reduced hole concentration inside the channel due to the recombination with electrons from SnO<SUB>2</SUB> is believed to be the reason for the electrical performance improvement in 230 °C air-annealed p-type tin oxide TFTs, and a partial formation of n-type SnO<SUB>2</SUB> channel is considered as the plausible reason for the ambipolar operation in tin oxide TFTs with high annealing temperatures. Our experimental results show that there is an optimum air-annealing temperature which can improve the electrical performance in p-type tin oxide TFTs.</P>