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      저자 : Meiqing Zhang (검색결과 2 건)
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      • Stability and Adaptability Analysis for PLL-Synchronized VSC-HVDC with Frequency Regulation Scheme under Islanded Grid

        Meiqing Zhang,Xiaoming Yuan,Jiabing Hu 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5

        Voltage-source converter (VSC) high voltage direct current (HVDC) connected to islanded grid is becoming a normal system operation mode. However, there is little research on the stability analysis of VSC-HVDC connected to islanded grid. On the basis of previous work, this paper analyzes the stability and adaptability of PLL-synchronized VSC-HVDC adopted with the additional frequency regulation scheme (FRS) under islanded grid. By defining the instantaneous frequency and regarding it as a state variable, the small-signal model of PLL-synchronized VSC under both grid-islanded mode and grid-connected mode is synthetically established. On this basis, the impact of FRS on the stability of PLL-synchronized VSC under islanded grid is analyzed, and then the adaptability of FRS to different grid strengths is investigated via considering different short current ratios (SCRs), including islanded grid (SCR=0), weak grid (SCR<2) and strong grid (SCR>5). The analysis results show that the FRS has important role on enhancing the small signal stability of the islanded grid, and also has excellent adaptability to the wide change of grid conditions, so as to further improve the possibility of the FRS applied in practical projects. These results finally are verified by time-domain simulations.

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        Advances in atomic layer deposited high-κ inorganic materials for gate dielectrics engineering of two-dimensional MoS2 field effect transistors

        Zhang Ling,Xing Houying,Yang Meiqing,Dong Qizhi,Li Huimin,Liu Song 한국탄소학회 2022 Carbon Letters Vol.32 No.5

        Molybdenum disulfide (MoS2) has been one of the most promising members of transition-metal dichalcogenides materials. Attributed to the excellent electrical performance and special physical properties, MoS2 has been broadly applied in semiconductor devices, such as field effect transistors (FETs). At present, the exploration of further improving the performance of MoS2-based FETs (such as increasing the carrier mobility and scaling) has encountered a bottleneck, and the application of high-κ gate dielectrics has become an effective approach to change this situation. Atomic layer deposition (ALD) enables high-quality integration of MoS2 and high-κ gate dielectrics at the atomic level. In this review, we summarize recent advances in the fabrication of two-dimensional MoS2 FETs using ALD high-κ materials as gate dielectrics. We first briefly discuss the research background of MoS2 FETs. Second, we expound the electrical and other essential properties of high-κ gate dielectrics, which are essential to the performance of MoS2 FETs. Finally, we focus on the advances in fabricating MoS2 FETs with ALD high-κ gate dielectrics on MoS2, as well as the optimized ALD processes. In addition, we also look forward to the development prospect of this field.

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