RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      검색결과 좁혀 보기

      선택해제
      • 좁혀본 항목 보기순서

        • 원문유무
        • 원문제공처
        • 등재정보
        • 학술지명
        • 주제분류
        • 발행연도
        • 저자
          펼치기

      오늘 본 자료

      • 오늘 본 자료가 없습니다.
      더보기
      • 무료
      • 기관 내 무료
      • 유료
      • SCISCIESCOPUS

        Photophysical, amplified spontaneous emission and charge transport properties of oligofluorene derivatives in thin films

        Choi, E. Y.,Mazur, L.,Mager, L.,Gwon, M.,Pitrat, D.,Mulatier, J. C.,Monnereau, C.,Fort, A.,Attias, A. J.,Dorkenoo, K.,Kwon, J. E.,Xiao, Y.,Matczyszyn, K.,Samoc, M.,Kim, D.-W.,Nakao, A.,Heinrich, B.,Ha The Royal Society of Chemistry 2014 Physical chemistry chemical physics Vol.16 No.32

        <P>We investigate the photophysical and amplified spontaneous emission properties of a series of monodisperse solution-processable oligofluorenes functionalized with hexyl chains at the C9 position of each fluorene unit. Thin films of these oligofluorenes are then used in organic field-effect transistors and their charge transport properties are examined. We have particularly focused our attention on the influence of oligofluorene length on the absorption and steady-state fluorescence spectra, on the HOMO/LUMO energy levels, on the photoluminescence lifetime and quantum yield as well as on the amplified spontaneous emission properties and the charge carrier mobilities. Differential scanning calorimetry and X-ray diffraction measurements demonstrate that, among all oligofluorene derivatives used in this study, only the structure and morphology of the pentafluorene film is significantly modified by a thermal treatment above the glass transition temperature, resulting in a 9 nm blue-shift of the fluorescence spectrum without significant changes in the photoluminescence quantum yield and in the amplified spontaneous emission threshold. In parallel, hole field-effect mobility is significantly increased from 8.6 × 10<SUP>−7</SUP> to 3.8 × 10<SUP>−5</SUP> cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> upon thermal treatment, due to an increase of crystallinity. This study provides useful insights into the morphological control of oligofluorene thin films and how it affects their photophysical and charge transport properties. Moreover, we provide evidence that, because of the low threshold, the tunability of the amplified spontaneous emission and the photostability of the films, these oligofluorenes are promising candidates for organic solid-state laser applications.</P> <P>Graphic Abstract</P><P>We investigate the charge transport, photophysical and amplified spontaneous emission properties of a series of monodisperse solution-processable oligofluorenes functionalized with hexyl chains at the C9 position of each fluorene unit. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c4cp01134a'> </P>

      • Charge carrier mobility study of a mesogenic thienothiophene derivative in bulk and thin films

        Mazur, L.,Castiglione, A.,Ocytko, K.,Kameche, F.,Macabies, R.,Ainsebaa, A.,Kreher, D.,Heinrich, B.,Donnio, B.,Sanaur, S.,Lacaze, E.,Fave, J.L.,Matczyszyn, K.,Samoc, M.,Wu, J.W.,Attias, A.J.,Ribierre, Elsevier Science 2014 Organic electronics Vol.15 No.4

        A novel mesogenic 2,5-bis-(5-octylthiophene)-thieno[3,2b]thiophene (TT) derivative has been synthesized. The fused-ring thiophene, end-capped with two octylthiophenes, exhibits ordered lamellar mesophases which were characterized by polarizing optical microscopy, differential scanning calorimetry and small-angle X-ray diffraction at various temperatures. The charge transport properties were investigated by time-of-flight technique as a function of temperature. On cooling from isotropic phase, a maximum hole mobility value of 0.07cm<SUP>2</SUP>V<SUP>-1</SUP>s<SUP>-1</SUP> was measured in the highly ordered mesophase of the bulk films. Field-effect transistor experiments on both solution and vacuum deposited thin films have also been performed. The solution-processed films exhibit charge carrier mobilities several orders of magnitude lower than values extracted from bulk time-of-flight curves and from vacuum deposited thin film transistors. This work provides evidence that the melt-processing route is an efficient alternative to commonly used solution-processing for fabrication of charge transporting layers from liquid crystalline semiconductors, with performances comparable to evaporation techniques.

      연관 검색어 추천

      이 검색어로 많이 본 자료

      활용도 높은 자료

      해외이동버튼