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Tang, Zhenjie,Ma, Dongwei,Jing, Zhang,Jiang, Yunhong,Wang, Guixia,Zhao, Dongqiu,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.
( Dan Li ),( Dongwei Fu ),( Yue Zhang ),( Xueling Ma ),( Liguo Gao ),( Xiaohua Wang ),( Dongpo Zhou ),( Kai Zhao ) 한국미생물생명공학회(구 한국산업미생물학회) 2017 Journal of microbiology and biotechnology Vol.27 No.8
The content of taxol in the bark of yews is very low, and this is not affordable from the environmental point of view. Thus, it is a necessity to look for alternative sources of taxol production to solve its supply. Currently, a large portion of the taxol in the market comes from chemical semi-synthesis, but the semi-synthetic precursors such as baccatin III and 10- deacetyl-baccatin III are extracted from needles and twigs of yew trees. Taxol-producing fungi as a renewable resource is a very promising way to increase the scale of taxol production. Our group has obtained a taxol-producing endophytic fungus, Aspergillus niger subsp. taxi HD86-9, to examine if A. niger can produce the taxanes. Six compounds from the fermentation broth of strain HD86-9 were isolated and identified by <sup>1</sup>H NMR, <sup>13</sup>C NMR, and ESI-MS. The results showed that the six compounds included four taxane diterpenoids (taxol, cephalomannine, baccatin III, and 10-deacetyl-baccatin III) and two non-taxane compounds (β-sitosterol and flavonoid isovitexin). The study verified that the taxanes can be produced by the A. niger, which is very important to taxol production via chemical semi-synthesis. Additionally, the finding is potentially very significant to solve the taxol semi-synthetic precursors extracted from needles and twigs of yew trees, and the precursor production can be easily increased through the culture condition optimization, genetic breeding, and metabolic engineering of the A. niger.
Tang, Zhenjie,Ma, Dongwei,Jing, Zhang,Jiang, Yunhong,Wang, Guixia,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
$Pt/Al_2O_3/Si_3N_4/SiO_2/Si$ charge trap flash memory structures with various thicknesses of the $Si_3N_4$ charge trapping layer were fabricated. According to the calculated and measured results, we depicted electron loss in a schematic diagram that illustrates how the trap to band tunneling and thermal excitation affects electrons loss behavior with the change of $Si_3N_4$ thickness, temperature and trap energy levels. As a result, we deduce that $Si_3N_4$ thicknesses of more than 6 or less than 4.3 nm give no contribution to improving memory performance.
Zhenjie Tang,Ma Dongwei,Zhang Jing,Jiang Yunhong,Wang Guixia,Zhao Dongqiu,Rong Li,Jiang Yin 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating (HfO2)x(Al2O3)1-x film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found thatthe memory window and charge retention performance can be improved by adding Al atoms into pure HfO2; further,the memory capacitor with a (HfO2)0.9(Al2O3)0.1 charge trapping layer exhibits optimized memory characteristicseven at high temperatures. The results should be attributed to the large band offsets and minimum trap energylevels. Therefore, the (HfO2)0.9(Al2O3)0.1 charge trapping layer may be useful in future nonvolatile flash memory deviceapplication.