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- 저자 : MANCANG LIU (검색결과 2 건)
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Experimental investigation on the deflection of a serpentine spring machined by WEDM
Mancang Song,Jie Wang,Yang Li,Junshan Liu 대한기계학회 2020 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.34 No.12
A kind of micro serpentine spring by wire electrical discharge machining (WEDM) is selected as research object, and the bending deformation mechanism of serpentine spring during cutting was discussed. Then a method of reducing the bending deformation of the micro serpentine spring was studied. The results demonstrate that the resultant force of the serpentine spring is attractive force. The degree of deformation is closely related to the material and the deformation of pure copper is smallest, so it is also a good choice to choose alternative materials. The deformation angle of the serpentine spring was reduced from 16.2° to 3.6° by establishing the supporting structure, changing the cutting trajectory, using multi-cutting and stress relief annealing methods. The bending deformation of the serpentine spring was significantly improved, which provided a new method for the processing of mechanical micro structures or devices.
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ELECTRONIC STRUCTURES AND TRANSPORT PROPERTIES OF SINGLE CRYSTALLINE GaN NANOTUBES
ENLING LI,LIPING HOU,ZHEN CUI,DANNA ZHAO,MANCANG LIU,XUEWEN WANG 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2012 NANO Vol.7 No.3
The electronic structures and transport properties of single crystalline GaN nanotubes with 0.92nm inner diameter and di®erent wall thicknesses of 0.08 nm, 0.26 nm and 0.54 nm are studied based on the generalized gradient approximation (GGA) of density functional theory (DFT) and the nonequilibrium green's function (NEGF). The research shows that (1) the three single crystalline GaN nanotubes have direct band gaps, decreasing with the increase of wall thickness;(2) the electronic density of state and electronic transmission spectra of two-probe system have their own pulse-type sharp peaks with almost the same location of electron energy; (3) under di®erent bias-voltages, two-probe systems of the single crystalline GaN nanotubes have the I?V properties which reveal that the single-wall GaN nanotube and the single-layer GaN nanotube are semiconducting and the double-layer GaN nanotube appears nearly metallic.
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