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        Semi-Insulating 4~6-Inch GaAs Crystals Grown in Low Temperature Gradients by the VCz Method

        P.Rudolph,M.Czupalla,Ch.Frank-Rotsch,F.Kiessling,M.Neubert,M.Pietsch 한양대학교 세라믹연구소 2003 Journal of Ceramic Processing Research Vol.4 No.2

        The results of growth of semi-insulating GaAs crystals with diameters of 100-150 mm and lengths up to 200 mm from the melt with starting charges up to 25 kg by the low-temperature gradient Vapour Pressure Controlled Czochralski method (VCz) are given and compared with the state of art of LEC growth. The methodical process optimization was assisted by global numerical simulations. A slightly convex interface morphology has been found to be the most suitable for moderate EPD of ~104 cm-2 in 150-mm crystals whilst simultaneously depressing the probability of dislocation bunchings. The carbon concentration was controlled down to values below 1014 cm-3. Electrical properties, including the EL2° content, are discussed. The first results of GaAs VCz crystals grown without B2O3 encapsulant are given. A reduced boron concentration but enhanced carbon and vacancy concentrations have been observed.

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        Crystal growth from melt in combined heater-magnet modules

        Rudolph, P.,Czupalla, M.,Dropka, N.,Frank-Rotsch, Ch.,KieBling, F.M.,Klein, O.,Lux, B.,Miller, W.,Rehse, U.,Root, O. The Korea Association of Crystal Growth 2009 韓國結晶成長學會誌 Vol.19 No.5

        Many concepts of external magnetic field applications in crystal growth processes have been developed to control melt convection, impurity content and growing interface shape. Especially, travelling magnetic fields (TMF) are of certain advantages. However, strong shielding effects appear when the TMF coils are placed outside the growth vessel. To achieve a solution of industrial relevance within the framework of the $KRISTMAG^{(R)}$ project inner heater-magnet modules(HMM) for simultaneous generation of temperature and magnetic field have been developed. At the same time, as the temperature is controlled as usual, e.g. by DC, the characteristics of the magnetic field can be adjusted via frequency, phase shift of the alternating current (AC) and by changing the amplitude via the AC/DC ratio. Global modelling and dummy measurements were used to optimize and validate the HMM configuration and process parameters. GaAs and Ge single crystals with improved parameters were grown in HMM-equipped industrial liquid encapsulated Czochralski (LEC) puller and commercial vertical gradient freeze (VGF) furnace, respectively. The vapour pressure controlled Czochralski (VCz) variant without boric oxide encapsulation was used to study the movement of floating particles by the TMF-driven vortices.

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