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RISS 인기검색어
- 검색키워드
- 저자 : M. Khaouani (검색결과 2 건)
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M. Khaouani,H. Bencherif,A. Hamdoune,A. Belarbi,Z. Kourdi 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.4
In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In0.3 Al0.7 As/InAs/InSb/In0.3 Al0.7 using Silvaco-TCAD. RF and analog electrical characteristics are assessed under high temperature eff ect. The impact of the temperature is evaluated referring to a device at room temperature. In particular, the threshold voltage ( V th ), transconductance ( g m ), and I on / I off ratio are calculated in the temperature range of 300 K to 700 K. The primary device exhibits a drain current of 950 mA, a threshold voltage of −1.75 V, a high value of transconductance g m of 650 mS/mm, I on / I off ratio of 1 × 10 6 , a transition frequency ( f t ) of 790 GHz, and a maximum frequency ( f max ) of 1.4 THZ. The achieved results show that increasing temperature act to decrease current, reduce g m , and I on / I off ratio. In more detail high temperature causes a phonon scattering mechanism happening that determine in turn a reduced drain current and shift positively the threshold voltage resulting in hindering the device DC/AC capability.
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Boosted Perovskite Photodetector Performance Using Graphene as Transparent Electrode
M. Khaouani,H. Bencherif,A. Meddour 한국전기전자재료학회 2022 Transactions on Electrical and Electronic Material Vol.23 No.2
In this paper, a new perovskite photodetector based on Graphene/reduced Graphene oxide/Perovskite material system has been investigated. A rigorous study through design of high speed and high sensitivity photodetector has been conducted to achieve an optimum device performance. The proposed photodetector was studied using 3D Atlas Silvaco simulator with regard to dark current, energy band diagram, electric fi eld profi le, photo to dark current ratio (PDCR), responsivity, sensitivity and detectivity. Our fi ndings demonstrate the outstanding ability of the proposed Graphene electrode scheme to reduce the undesirable shadowing eff ect and enhance the collection mechanism. Besides, reduced graphene oxide interlayer with high conductivity plays a crucial role for high effi cient charge transportation. The proposed design displays 10 times photocurrent improvement when compared to the conventional design Au/TiO 2 /Perovskite photodetector. The proposed device displays a high value of responsivity of 340 A/W, a 100 GHz bandwidth with 10 μs transient response, and signifi cant PDCR of 646.4, high detectivity of 2.61 × 10 13 (Jones) and high sensitivity of 6.46 × 10 4 . In addition, the proposed photodetector shows ruggedness under high temperature condition. This modeling strategy is able to direct other researchers in the design and development of effi cient perovskite optoelectronic devices.
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