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M. Galindo-Mentle,F. López-Huerta,R. Palomino-Merino,C. Zúñiga-Islas,W. Calleja-Arriaga,A. L. Herrera-May 대한기계학회 2015 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.29 No.4
We present a fabrication process of microstructures using both boron-doped hydrogenated amorphous silicon and hydrogenated amorphoussilicon-germanium (a-SiB:H and a-Si0.5Ge0.5B:H) films for applications in devices based on microelectromechanical systems(MEMS). These microstructures are fabricated through plasma enhanced chemical vapor deposition (PECVD) with a low temperature of300°C at 110 kHz and a pressure of 0.6 Torr. The proposed microstructures have three different geometries (Diamond, cantilever andbridge) considering a single structural layer of 1 μm thickness and are fabricated using surface micromachining. The fabricated a-Si0.5Ge0.5B:H microstructures do not present sticking problems and have good mechanical stability, which can allow their use in MEMSdevices. Our fabrication process with hydrogenated amorphous SiGe films is simple. This process decreases the residual stress of themicrostructures and allows the metal deposition on the microstructures surfaces.