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Physics of the Coefficient of Friction in CMP
Borucki, Len,Philipossian, Ara,Zhuang, Yun The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
The implications of a theory of lubricated pad asperity wafer contact are traced through several fundamental areas of chemical-mechanical polishing. The hypothesized existence of a nanolubrication layer underlies a high accuracy model of polish rates. It also provides a quantitative explanation of a power law relationship between the coefficient of friction and a measure of pad surface flattening. The theory may further be useful for interpreting friction changes during polishing, and may explain why the coefficient of friction is sometimes observed to have a temperature or velocity dependence.
Physics of the Coefficient of Friction in CMP
Len Borucki,Ara Philipossian,Yun Zhuang 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
The implications of a theory of lubricated pad asperity wafer contact are traced through several fundamental areas of chemical-mechanical polishing. The hypothesized existence of a nanolubrication layer underlies a high accuracy model of polish rates. It also provides a quantitative explanation of a power law relationship between the coefficient of friction and a measure of pad surface flattening. The theory may further be useful for interpreting friction changes during polishing, and may explain why the coefficient of friction is sometimes observed to have a temperature or velocity dependence.
Thermal, Tribological, and Removal Rate Characteristics of Pad Conditioning in Copper CMP
Lee, Hyo-Sang,DeNardis, Darren,Philipossian, Ara,Seike, Yoshiyuki,Takaoka, Mineo,Miyachi, Keiji,Furukawa, Shoichi,Terada, Akio,Zhuang, Yun,Borucki, Len The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
High Pressure Micro Jet (HPMJ) pad conditioning system was investigated as an alternative to diamond disc conditioning in copper CMP. A series of comparative 50-wafer marathon runs were conducted at constant wafer pressure and sliding velocity using Rohm & Haas IC1000 and Asahi-Kasei EMD Corporation (UNIPAD) concentrically grooved pads under ex-situ diamond conditioning or HPMJ conditioning. SEM images indicated that fibrous surface was restored using UNIPAD pads under both diamond and HPMJ conditioning. With IC1000 pads, asperities on the surface were significantly collapsed. This was believed to be due to differences in pad wear rates for the two conditioning methods. COF and removal rate were stable from wafer to wafer using both diamond and HPMJ conditioning when UNIPAD pads were used. Also, HPMJ conditioning showed higher COF and removal rate when compared to diamond conditioning for UNIPAD. On the other hand, COF and removal rates for IC1000 pads decreased significantly under HPMJ conditioning. Regardless of pad conditioning method adopted and the type of pad used, linear correlation was observed between temperature and COF, and removal rate and COF.
Thermal, Tribological, and Removal Rate Characteristics of Pad Conditioning in Copper CMP
Hyosang Lee,Darren DeNardis,Ara Philipossian,Yoshiyuki Seike,Mineo Takaoka,Keiji Miyachi,Shoichi Furukawa,Akio Terada,Yun Zhuang,Len Borucki 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
High Pressure Micro Jet (HPMJ) pad conditioning system was investigated as an alternative to diamond disc conditioning in copper CMP. A series of comparative 50-wafer marathon runs were conducted at constant wafer pressure and sliding velocity using Rohm & Haas IC1000 and Asahi-Kasei EMD Corporation (UNIPAD) concentrically grooved pads under ex-situ diamond conditioning or HPMJ conditioning. SEM images indicated that fibrous surface was restored using UNIPAD pads under both diamond and HPMJ conditioning. With IC1000 pads, asperities on the surface were significantly collapsed. This was believed to be due to differences in pad wear rates for the two conditioning methods. COF and removal rate were stable from wafer to wafer using both diamond and HPMJ conditioning when UNIPAD pads were used. Also, HPMJ conditioning showed higher COF and removal rate when compared to diamond conditioning for UNIPAD. On the other hand, COF and removal rates for IC1000 pads decreased significantly under HPMJ conditioning. Regardless of pad conditioning method adopted and the type of pad used, linear correlation was observed between temperature and COF, and removal rate and COF.