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Alejandro Tapia-Hernandez,Mario Ponce-Silva,Victor Hugo Olivares-Peregrino,Jesus Elias Valdez-Resendiz,Leobardo Hernandez-Gonzalez 전력전자학회 2017 JOURNAL OF POWER ELECTRONICS Vol.17 No.4
The main contribution of this paper is the use of sensorless active diodes to generate the gate signals for a three-phase boost-rectifier with a self-powered control scheme. The sensorless operation is achieved making use of the gate control signals generated by the active diode schemes on each of the switching devices using a pulse width half-controlled boost rectifier modulation technique (PWM-HCBR). The proposed scheme synchronizes the gate control signals with a three phase voltage supply. Autonomous operation is obtained making use of the output DC bus to feed the control circuitry, the active diodes and the driver circuitry. The three-phase boost-rectifier is supplied by a three-phase permanent magnet electric generator powered by a solar concentrator dish with variable voltage and variable frequency conditions. Experimental results report an efficiency of up to 94.6% for 25 W and an input of 3.6 V peak per phase with 450.
Physical Modeling of SiC Power Diodes with Empirical Approximation
Leobardo Hern´andez,Abraham Claudio,Marco A. Rodriguez,Mario Ponce,Alejandro Tapia 전력전자학회 2011 JOURNAL OF POWER ELECTRONICS Vol.11 No.3
This article presents the development of a model for SiC power diodes based on the physics of the semiconductor. The model is able to simulate the behavior of the dynamics of the charges in the N- region based on the stored charge inside the SiC power diode, depending on the working regime of the device (turn-on, on-state, and turn-off). The optimal individual calculation of the ambipolar diffusion length for every phase of commutation allows for solving the ambipolar diffusion equation (ADE) using a very simple approach. By means of this methodology development a set of differential equations that models the main physical phenomena associated with the semiconductor power device are obtained. The model is developed in Pspice with acceptable simulation times and without convergence problems during its implementation.
Physical Modeling of SiC Power Diodes with Empirical Approximation
Hernandez, Leobardo,Claudio, Abraham,Rodriguez, Marco A.,Ponce, Mario,Tapia, Alejandro The Korean Institute of Power Electronics 2011 JOURNAL OF POWER ELECTRONICS Vol.11 No.3
This article presents the development of a model for SiC power diodes based on the physics of the semiconductor. The model is able to simulate the behavior of the dynamics of the charges in the N- region based on the stored charge inside the SiC power diode, depending on the working regime of the device (turn-on, on-state, and turn-off). The optimal individual calculation of the ambipolar diffusion length for every phase of commutation allows for solving the ambipolar diffusion equation (ADE) using a very simple approach. By means of this methodology development a set of differential equations that models the main physical phenomena associated with the semiconductor power device are obtained. The model is developed in Pspice with acceptable simulation times and without convergence problems during its implementation.
Tapia-Hernandez, Alejandro,Ponce-Silva, Mario,Olivares-Peregrino, Victor Hugo,Valdez-Resendiz, Jesus Elias,Hernandez-Gonzalez, Leobardo The Korean Institute of Power Electronics 2017 JOURNAL OF POWER ELECTRONICS Vol.17 No.4
The main contribution of this paper is the use of sensorless active diodes to generate the gate signals for a three-phase boost-rectifier with a self-powered control scheme. The sensorless operation is achieved making use of the gate control signals generated by the active diode schemes on each of the switching devices using a pulse width half-controlled boost rectifier modulation technique (PWM-HCBR). The proposed scheme synchronizes the gate control signals with a three phase voltage supply. Autonomous operation is obtained making use of the output DC bus to feed the control circuitry, the active diodes and the driver circuitry. The three-phase boost-rectifier is supplied by a three-phase permanent magnet electric generator powered by a solar concentrator dish with variable voltage and variable frequency conditions. Experimental results report an efficiency of up to 94.6% for 25 W and an input of 3.6 V peak per phase with 450.