http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Practical Implementation of an Interleaved Boost Converter using SiC Diodes for PV Applications
C.N.M. Ho,H. Breuninger,S. Pettersson,G. Escobar,L. Serpa,A. Coccia 전력전자학회 2011 ICPE(ISPE)논문집 Vol.2011 No.5
The implementation of an interleaved boost converter using SiC diodes for PV applications is presented in this paper. The converter consists of two switching cells sharing the PV panel output current. Their switching patterns are synchronized with 180 degree phase shift. Each switching cell has a SiC Schottky diode and a CoolMOS switching device. The SiC diodes provide zero reverse recovery current ideally, which reduces the commutation losses of the switches. Such advantage from the SiC diodes can make the converter system achieve higher efficiency and higher power density by reducing the requirement of the cooling system. This paper presents also an optimization study of the size and efficiency of the interleaved boost converter. Based on 1) the steady-state characteristic of the topology, 2) the static and dynamic characteristics of the switching cells, 3) the loss model of the magnetic components and 4) the cooling system design, the paper provides a set of design criteria, procedures and experimental results for a 2.5 ㎾ interleaved boost converter using SiC diodes prototype.