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최성대,鈴木 裕土,秋田 貢一,三澤 啓志 金烏工科大學校 2000 論文集 Vol.21 No.-
X-ray stress measurements of a single crystal silicon were carried out using characteristic X-rays. The χy-oscillation method was used as the oscillation method of a specimen for obtaining a perfect diffraction profile. Applied stress measurements of a single crystal silicon were carried out using characteristic X-rays. The stresses in three steps were applied on a specimen using a four-point bending device. The diffraction angles of three different diffraction planes were measured in each step using a φ800 ㎛ collimator, and the stresses were calculated from the peak shift. The measured stresses agreed well with the applied stresses evaluated using a strain gage. Therefore, the possibility of X-ray stress measurements of a single crystal was confirmed.