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Melvin John F. Empizo,Kohei Yamanoi,Kazuhito Fukuda,Ren Arita,Yuki Minami,Toshihiko Shimizu,Nobuhiko Sarukura,Tsuguo Fukuda,Alexandra B. Santos-Putungan,Ray M. Vargas,Arnel A. Salvador,Roland V. Sarma 한양대학교 세라믹연구소 2015 Journal of Ceramic Processing Research Vol.16 No.1
Photoluminescence properties of bulk and microstructured ZnO crystals are investigated for potential scintillator applications. A bulk crystal is prepared by hydrothermal method, while hexagonal micron-sized crystals are prepared by aqueous chemical growth and carbothermal reduction methods. The bulk sample exhibits UV emission only, while the microstructured samples exhibit both UV and visible emissions. The ZnO microstructures have faster near-band edge emission lifetimes of 100 to 800 ps compared to 440 ps and 2 ns of bulk ZnO. No direct correlation between the defect-related emissions and the near-band edge emission has been observed. ZnO microstructures with fast luminescence lifetimes have promising applications as EUV lithography and XFELs scintillators.