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Characteristics of the Oxygen Plasma and Its Application to Photoresist Stripping
황기웅,이종덕,김정호,Whang, Ki Woong,Lee, Jong Duk,Kim, Joung Ho The Institute of Electronics and Information Engin 1987 전자공학회논문지 Vol.24 No.1
The physical mechanism of a RF discharge used in photoresist stripping and etching process are not well understood and, plasma reactor design and the determination of optimum operating coditions are done largely on empirical basis. We analyzed the discharge process through the measurement of plasma characteristics and applied out results tothe analysis of the photoresist stripping. We investigated the effects of plasma electron density, neutral oxygen gas pressure and electrode temperature on the stripping rates and related their effects with the characteristics of plasma.