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Effect of Parasitic Capacitance on RF MEMS Switch OFF/ON Ratio
Deepak Bansal,Khushbu Mehta,Anuroop Bajpai,Amit Kumar,Prem Kumar,Kamaljit Rangra 한국전기전자재료학회 2019 Transactions on Electrical and Electronic Material Vol.20 No.2
Radio frequency micro-electro-mechanical system (RF MEMS) switch is basic component for transponders used in communication system. Switch “OFF/ON” capacitance ratio plays major role in controlling signal to noise ratio. Theoretically,with high dielectric constant material or fl oating metal concept, capacitance ratio can be improved up to 2000 or even more. Whereas, in most of the practical cases, measured ratio is less than 200. In present paper, RF MEMS capacitive switch LCR parameters are extracted considering parasitic capacitance to explain the mismatch of measured results. Parasitic capacitance is independent from device overlap area. Parasitic capacitance is function of switch geometry and directly proportional to dielectric constant of the substrate material.