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        Structural characterization of Eu-doped GaN by transmission electron microscopy

        Jongwon Seo,Shaoqiang Chen,Junji Sawahata,Masaharu Mitome,Katsuhiro Akimoto 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.1

        The structural properties of Eu-doped GaN films grown on sapphire (0001) substrates by molecular beam epitaxy were studied using cross sectional transmission electron microscopy (TEM). The Eu concentration was estimated to be about 2at.% by Rutherford backscattering spectrometry and energy dispersive X-ray spectroscopy. Selected area diffraction patterns of the film showed a hexagonal structure, and no other anomalous patterns such as from Eu and EuN were observed. The high resolution TEM observation of the films showed a high density of stacking faults which was hardly observed in undoped GaN, bending layers and a small portion of cubic phase. The causes of the formation of stacking faults and bending of layers are discussed. The structural properties of Eu-doped GaN films grown on sapphire (0001) substrates by molecular beam epitaxy were studied using cross sectional transmission electron microscopy (TEM). The Eu concentration was estimated to be about 2at.% by Rutherford backscattering spectrometry and energy dispersive X-ray spectroscopy. Selected area diffraction patterns of the film showed a hexagonal structure, and no other anomalous patterns such as from Eu and EuN were observed. The high resolution TEM observation of the films showed a high density of stacking faults which was hardly observed in undoped GaN, bending layers and a small portion of cubic phase. The causes of the formation of stacking faults and bending of layers are discussed.

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