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Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).
Jang, Jongjin,Woo, Seohwi,Min, Daehong,Nam, Okhyun American Scientific Publishers 2015 Journal of Nanoscience and Nanotechnology Vol.15 No.3
<P>The III-nitrides have attracted much attention because of their applicability in optoelectronic devices, whose emission wavelengths range from green to ultraviolet light due to their wide band gap. However, conventional c-plane GaN-based devices are influenced significantly by spontaneous and piezoelectric polarization effects, which could pose a limitation for increased luminous efficiency as a result of the quantum confined stark effect. Since the early 2000s, many groups have tried to solve these problems by examining the growth of GaN on non- or semipolar surface planes. High power non- and semipolar LEDs can be realized by the growth of a thick active layer. In addition, it is expected that it is possible to grow nonpolar InGaN LEDs with high quality p-GaN layers due to lower hole activation energy, and also long-wavelength semipolar InGaN LEDs because of the capacity for high indium incorporation in the quantum wells (QWs). However, non- and semipolar structures grown on sapphire substrate usually contain a high density of basal stacking faults and threading dislocations. For this reason, the growth of non- and semipolar GaN-based LEDs on a sapphire substrate has been attempted through the introduction of defect reduction techniques such as epitaxial lateral overgrowth, patterned sapphire substrate and re-growth techniques on a porous GaN layer, etc. Also, some researchers have grown high quality non- and semipolar GaN-based LEDs using non- and semipolar freestanding GaN substrates. In this review paper, we introduce and discuss recent progress in the development of non- and semipolar GaN-based LEDs and freestanding GaN substrates.</P>
조골세포 세포사멸의 Estrogen 조절에 대한 Hsp27의 영향에 관한 연구
장현석(Hyonseok Jang),윤정주(Jungju Eune),임재석(Jaesuk Rim),권종진(Jongjin Kwon),최철민(Cheolmin Choi) 대한구강악안면외과학회 2004 대한구강악안면외과학회지 Vol.30 No.4
Estrogen may promote osteoblast/osteocyte viability by limiting apoptotic cell death. We hypothesize that hsp27 is an estrogen- regulated protein that can promote osteoblast viability by increasing osteoblast resistance to apoptosis. The purpose of this study was to determine the effect of estrogen treatment and heat shock on TNFα- induced apoptosis in the MC3T3-E1 cell line. Cells were treated with 0 - 100 nM 17βestradiol (or ICI 182780) for 0 - 24 hours before heat shock. After recovery, apoptosis was induced by treatment with 0 - 10 ng/ml TNFα. Hsp levels were evaluated by Northern and Western analysis using hsp27, hsp47, hsp70c and hsp70i - specific reagents. Apoptosis was revealed by in situ labeling with Terminal Deoxyribonucleotide Transferase (TUNEL). A 5 - fold increase in hsp27 protein and mRNA was noted after 5 hours of treatment with 10 - 20 nM 17βestradiol prior to heat shock. Increased abundance of hsp47, hsp70c or hsp70i was not observed. TUNEL indicated that estrogen treatment also reduced (50%) MC3T3-E1 cell susceptibility to TNFα- induced apoptosis. Treatment with hsp27-specific antisense oligonucleotides prevented hsp27 protein expression and abolished the protective effects of heat shock and estrogen treatment on TNFα- induced apoptosis. Hsp27 is a determinant of osteoblast apoptosis, and estrogen treatment increases hsp27 levels in cultured osteoblastic cells. Hsp27 contributes to the control of osteoblast apoptosis and may be manipulated by estrogenic or alternative pathways for the improvement of bone mass.
장환영 ( Hwanyoung Jang ),정원주 ( Wonju Jung ),김종진 ( Jongjin Kim ) 한국도시지리학회 2021 한국도시지리학회지 Vol.24 No.2
With the global spread of smart cities, the demand for smart city development is increasing not only developed countries but also in developing countries. The purpose of this study is to provide marketing directions that reflect the results of segmenting the smart city market by assessment the level and potential of each smart city sector in four ASEAN countries. This study proceeded with the steps of establishing an analysis model based on the STP theory, assessing the smart city level and potential, deriving the status index and potential index, and setting the marketing direction. Since smart cities have a wide range and market competition is very fierce, marketing strategies suitable for each country’s characteristics and situations are needed to succeed in overseas espansion. From this perspective, this study will provide policy implications for promoting overseas expansion of smart cities in Korea.
HDR 기술을 활용한 2018 러시아 월드컵 UHD방송 VOD 서비스
하종진(Ha JongJin),이돈일(Lee DonIl),구자훈(Ku Jahoon),엄영식(Um YoungSik),박석기,송재호(Song JaeHo),장진희(Jang JinHee),전성규(Jeon SeongGyu) 한국방송·미디어공학회 2018 한국방송공학회 학술발표대회 논문집 Vol.2018 No.11
KBS를 비롯한 지상파방송 3사는 실시간 UHD방송과 VOD 온라인 동영상 서비스가 결합된 세계 최초의 지상파 양방향 UHD 플랫폼인 Tiviva(이하 티비바) 서비스를 2017년 11월 오픈하였다. 티비바는 별도의 셋톱박스 없이 UHD TV에 직접수신 안테나와 인터넷을 연결하여 지상파 방송사의 실시간 방송 채널 외에 다양한 UHD VOD와 클립을 이용할수 있고, 스포츠와 드라마, 종편(JTBC, MBN), 영화 등 50여 개의 IP채널을 추가로 볼 수 있는 서비스이다. 이후 2018년 1월에는 이용자 편리성과 자동추천 기능 등 UI/UX를 크게 개선한 티비바 2.0을 업데이트 하였고, 평창올림픽 기간에는 전 경기 실시간 스트리밍 및 올림픽특별관을 운영하였다. 2018년 6월 러시아 월드컵 기간에는 축구 경기 UHD HDR 방송 중계와 함께 티비바를 통한 HDR VOD를 최초로 서비스하여 스포츠 경기를 즐기는 또다른 즐거움을 선사하였다. 본 논문에서는 러시아 월드컵 HDR VOD 서비스를 준비하고 시행하기 위한 시스템 설계 및 진행과정, 기술 이슈 등에 대해서 기술하려고 한다.
Heo, Cheon,Jang, Jongjin,Lee, Kyungjae,So, Byungchan,Lee, Kyungbae,Ko, Kwangse,Nam, Okhyun American Scientific Publishers 2017 Journal of Nanoscience and Nanotechnology Vol.17 No.1
<P>We investigated the correlation between the crystal quality and two-dimensional electron gas (2DEG) mobility of an AlGaN/GaN high-electron-mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition. For the structure with an AlN nucleation layer grown at 1100 degrees C, the 2DEG mobility and sheet carrier density were 1627 cm(2)/V . s and 3 x 23x10(13) cm(-2), respectively, at room temperature. Further, it was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.</P>