http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Jiyan Lin (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
Research on the Scheduling of Legal Operating Vehicles based on NFC
Jiyan Lin,Peini Shang,Fei Yang,Yongheng Zhang 보안공학연구지원센터 2016 International Journal of Grid and Distributed Comp Vol.9 No.11
In the study of reasons that cause the flush illegal operating vehicles, we found out that the insufficient legal operating vehicles were the main cause. In order to efficiently solve the illegal operating, the paper brings out the research of scheduling algorithm about the legal operating vehicles based on NFC. The research uses the NFC technology to realize the intelligent and fast identification and the scheduling algorithm to realize the problem of insufficient legal operating vehicles. The scheduling can be divided into two stages--the multi-level queues high response ratio first scheduling and the multi-level queues earliest available time first scheduling. The algorithm can choose the user whose response ratio is the highest from the users’scheduling list and allocate the user who has the highest ratio to the legal operating vehicle who has the earliest available time that in the same area. Experiment indicates that the scheduling success ratio, throughput, average waiting time of the scheduling algorithm are superior to random travel of the drivers and can efficiently resolve the insufficient of legal operating vehicles.
-
Liang, Weizheng,Gao, Min,Lu, Chang,Zhang, Zhi,Chan, Cheuk Ho,Zhuge, Lanjian,Dai, Jiyan,Yang, Hao,Chen, Chonglin,Park, Bae Ho,Jia, Quanxi,Lin, Yuan American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.9
<P>Vanadium dioxide (VO<SUB>2</SUB>) is a strong-correlated metal-oxide with a sharp metal-insulator transition (MIT) for a range of applications. However, synthesizing epitaxial VO<SUB>2</SUB> films with desired properties has been a challenge because of the difficulty in controlling the oxygen stoichiometry of VO<SUB><I>x</I></SUB>, where <I>x</I> can be in the range of 1 < <I>x</I> < 2.5 and V has multiple valence states. Herein, a unique moisture-assisted chemical solution approach has been developed to successfully manipulate the oxygen stoichiometry, to significantly broaden the growth window, and to significantly enhance the MIT performance of VO<SUB>2</SUB> films. The obvious broadening of the growth window of stoichiometric VO<SUB>2</SUB> thin films, from 4 to 36 °C, is ascribed to a self-adjusted process for oxygen partial pressure at different temperatures by introducing moisture. A resistance change as large as 4 orders of magnitude has been achieved in VO<SUB>2</SUB> thin films with a sharp transition width of less than 1 °C. The much enhanced MIT properties can be attributed to the higher and more uniform oxygen stoichiometry. This technique is not only scientifically interesting but also technologically important for fabricating wafer-scaled VO<SUB>2</SUB> films with uniform properties for practical device applications.</P> [FIG OMISSION]</BR>
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
