http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Jinhee Heo 한양대학교 세라믹연구소 2012 Journal of Ceramic Processing Research Vol.13 No.S1
We have employed Kelvin force microscopy (KFM) system to measure the potential change of a single SnO2 nanowire which had been synthesized on the Au thin film by a thermal process. By using the KFM probing technique, Rh coated conducting cantilever can approach a single SnO2 nanowire in nano scale and get the potential images with oscillating AC bias between Au electrode and cantilever. Also, during imaging the potential status, we controlled the concentration of oxygen in measuring chamber to change the ionosorption rate. From the results of such experiments, we verified that the surface potential as well as doping type of a single SnO2 nanowire could be changed by oxygen ionosorption.
Optimum Ge Pro le for the High Cut-O Frequency and the DC Current Gain of an SiGe HBT for MMIC
김경해,JinheeHeo,SunghoonKim,D.Mangalaraj,JunsinYi,HoongjooLee,ByungryulRyum 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
This paper reports the effects of the Ge proles shape on the cut off frequency and the DC current gain of SiGe heterojunction bipolar transistors (HBT's). Device simulations using ATLAS/BLAZE for a SiGe HBT with a trapezoidal or a triangular Ge prole are carried out to optimize the device performance. A HBT with a 15 % triangular Ge profile shows a higher cut-o frequency and DC current gain than that with a 19 % trapezoidal Ge prole. It was observed that the cut-off frequency and DC current gain as 84 GHz and 600 respectively for the case of 15 % triangular Ge prole instead of 42 GHz and 200 which was observed for 19 % trapezoidal Ge profile.