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Impact of Various Charge States of Hydrogen on Passivation of Dislocation in Silicon
Lihui Song,Jingjing Lou,Jiayi Fu,Zhenguo Ji 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.5
Dislocation, one of typical crystallographic defects in silicon, is detrimental to the minority carrier lifetime of silicon wafer. Hydrogen passivation is able to reduce the recombination activity of dislocation, however, the passivation efficacy is stronglydependent on the experimental conditions. In this paper, a model based on the theory of hydrogen charge state control isproposed to explain the passivation efficacy of dislocation correlated to the peak temperature of thermal annealing and illuminationintensity. Experimental results support the prediction of the model that a mix of positively charged hydrogen andnegatively charged hydrogen at certain ratio can maximise the passivation efficacy of dislocation, leading to a better powerconversion efficiency of silicon solar cell with dislocation in it.