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박용국,Jinggang Lu,박진홍,George Rozgonyi 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.4
The impact of structural defect density on gettering of transition metal impurities during phosphorous emitter diffusion has been investigated using a pair of multi-crystalline silicon (mc-Si) wafers. Chromium (Cr) impurities incorporated during growth were identified by deep level transient spectroscopy (DLTS) and used to evaluate the gettering efficiency. The Cr impurity concentration in the low defect density region of mc-Si wafers was reduced from ~3.5 × 1013 cm−3 to ~1.7 × 1012 cm−3 after phosphorous diffusion gettering (PDG), while for the high defect density region, there is no appreciable variation in the Cr concentration which only changed from ~3.0 to ~2.2 × 1012 cm−3 following PDG. It was concluded that the gettering process is not effective for highly defective regions of mc-Si wafers due to the ineffective impurity release from structural defects during the PDG process.
박영국,Jinggang Lu,박진홍,George Rozgonyi 대한금속·재료학회 2015 ELECTRONIC MATERIALS LETTERS Vol.11 No.6
In this article, the impact of hydrogenation on the electrical properties of impurity (Fe)-contaminated silicon grain boundaries (GBs) is investigated using capacitance-voltage (C-V) and capacitance transient (C-t) techniques with hybrid orientation direct-silicon-bonded (DSB) wafers. The samples consist of a 2.3 μm thick (110) Si layer on a p-type (100) Si substrate produced via hydrophilic wafer bonding, cleavage, and epithickening. It was found that for a relatively clean GB, the density of the GB states (DGB) is ~6 × 1012 eV−1cm−2, and the charge neutral level is ~0.53 eV from the valance band. DGB increases to more than 2 × 1013 eV−1cm−2 after the Fe contamination, which is reduced to ~1 × 1013 eV−1cm−2 after the hydrogenation treatment. The charge neutral level, which shifts toward the conduction band after the Fe contamination, is reversed after hydrogenation.