http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Chandra, S. V. Jagadeesh,Jeong, Myung-Il,Park, Yun-Chang,Yoon, Jong-Won,Choi, Chel-Jong The Japan Institute of Metals 2011 MATERIALS TRANSACTIONS Vol.52 No.1
<P>We fabricated Ge metal-oxide-semiconductor (MOS) devices with Pt/HfO<SUB>2</SUB> gate stacks and investigated the effect of thermal treatment on their structural and electrical properties in oxygen (O<SUB>2</SUB>) and forming gas (FG) environments. The annealing ambient dependency of the structural and electrical properties of Ge MOS devices was directly compared to that of Si MOS devices. For both Ge and Si MOS devices, the thermal treatment process led to a decrease in accumulation capacitance regardless of the annealing ambient. The interfacial layer (IL) at the HfO<SUB>2</SUB>/Ge stack was much thinner than the HfO<SUB>2</SUB>/Si stack. O<SUB>2</SUB> annealing resulted in the improvement of the HfO<SUB>2</SUB> interfacial quality of Ge and Si MOS devices, although the improvement of the Ge devices was greater than that of the Si devices. FG annealing was much more effective in the reduction of interface state density (<I>D</I><SUB>it</SUB>) in Si devices than in Ge devices. A negligible IL at a HfO<SUB>2</SUB>/Ge stack could be a main cause of degraded electrical performance of a Ge device with FG annealing.</P>
Chandra, S. V. Jagadeesh,Hong, Woong‐,Ki,Kim, Jin‐,Sung,Hong, Hyobong,Choi, Chel‐,Jong Heyden & Son 2012 Surface and interface analysis Vol.44 No.11
<P>The inherent contributions of Fermi level pinning in Ge metal‐oxide‐semiconductor devices with Pt/HfO<SUB>2</SUB> gate stacks were investigated by examining the impact of thermal treatment in forming gas (FG) and oxygen environments on the effective metal work function (<I>Φ</I><SUB>m,eff</SUB>) of the Pt gate electrode. The <I>Φ</I><SUB>m,eff</SUB> of the Pt gate electrode for as‐deposited devices was extracted to be ~4.1 eV. However, the FG annealing process led to the increase in the <I>Φ</I><SUB>m,eff</SUB> of the Pt gate electrode up to ~4.5 eV, whereas no variation was noticed after oxygen annealing process. The interstitial hydrogen atoms with negative charge introduced by the FG annealing compensate positively charged dipoles associated with the Fermi level pinning of Ge. This could be responsible for the increased <I>Φ</I><SUB>m,eff</SUB> of the Pt gate electrode in FG‐annealed devices. Copyright © 2012 John Wiley & Sons, Ltd.</P>
Mechanical, Thermal and Electromagnetic Shielding Effectiveness of MWCN-ABS Films
R. B. Jagadeesh Chandra,B. Shivamurthy,M. Sathish Kumar,B. H. S. Thimmappa 한국전기전자재료학회 2022 Transactions on Electrical and Electronic Material Vol.23 No.3
The multi-walled carbon nanotubes (MWCNTs) and the poly(acrylonitrile-co-butadiene-co-styrene) (ABS) granulates are dispersed in acetone separately using a magnetic stirrer followed by ultrasonication. Further, both the solutions were mixed with magnetic stirring followed by ultrasonication. Neat-ABS film, 0.25 wt%, 0.5 wt% and 1 wt% of MWCNT-ABS nanocomposite films of the average thickness of 140 μm are fabricated by the solution molding using a petri dish, followed by room temperature curing and further hot compression to maintain uniform thickness. The tensile properties, thermal stability, electrical conductivity, and EMSE of all films are investigated. The results indicate that the addition of MWCNTs to ABS enhanced the mechanical properties and electrical conductivity, thermal stability, and EMSE. The 0.25 wt% MWCNT-ABS nanocomposite films show attractive mechanical, electrical, thermal, and EMSE as compared to neat-ABS fi lms. More than 0.25 wt% MWCNTs in the ABS matrix deteriorates the tensile strength. However, 0.5 wt% MWCNT-ABS nanocomposites exhibit better tensile strength, Young’s modulus, electrical conductivity, and EMSE than neat-ABS. In this research, we used a low quantity of MWCNTs and followed a one-time heating process in the entire fabrication, and produced MWCNT-ABS nanocomposite films with reasonable properties. Hence, this may be one of the options to produce nanocomposites suitable for EMS materials. We recommend that these films may be used as interlayers to develop an X-band range electromagnetic wave shielding material.
LEE, Hoon-Ki,CHANDRA, S.V. Jagadeesh,SHIM, Kyu-Hwan,YOON, Jong-Won,CHOI, Chel-Jong The Institute of Electronics, Information and Comm 2011 IEICE transactions on electronics Vol.94e.c No.5
<P>We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta<SUB>2</SUB>O<SUB>5</SUB> gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta<SUB>2</SUB>O<SUB>5</SUB> film, the values of equivalent oxide thickness (EOT) and flat band voltage (V<SUB>FB</SUB>) increase whilst the density of interfacial trap (D<SUB>it</SUB>) gradually decreases. The effective metal work function (Φ<SUB>m,eff</SUB>) of Pt metal gate, extracted from the relations of EOT versus V<SUB>FB</SUB> are calculated to be ∼5.29eV, implying that Fermi-level pinning in Ta<SUB>2</SUB>O<SUB>5</SUB> gate dielectric is insignificant.</P>