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- 저자 : J. Koohsorkhi (검색결과 2 건)
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Fabrication of High Sensitive UV Photodetector Based on n-ZnO Nanowire/n-Porous-Si Heterojunction
M. M. Haji Shahkarami,J. Koohsorkhi,H. Ghafoori Fard 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2017 NANO Vol.12 No.4
In this paper, we have reported the high sensitive UV detector using ZnO nanowires prepared on porous silicon (PS). The aligned naturally doped n-type zinc oxide (ZnO) nanowires were grown on both PS and n-Si(100) substrates to produce isotype heterojunctions using hydrothermal method. The length of the nanowires ranges 3–4 µm and the diameter 150–200 nm. Grown ZnO nanowires on PS substrate has lower reflectivity value compared with Si substrate. The electrical behavior of such devices has been examined at different intensities of UV radiation. The current– voltage curve of the isotype heterojunction shows rectifying behavior in a dark environment. Under UV light, the current was increased by using PS instead of n-Si under reverse bias. The I–V characteristics of the device show a significant rise in the current for low intensity of UV radiation evidencing the high sensitivity of the reported structure. The sensitivity for such devices is obtained, 2.2 x 10 3, 0.47 x 10 3 and 0.21 x 10 3 at UV radiation of 1.5 mW/cm2 intensity at bias voltage of -0.75 V for three proposed structures. The samples have been analyzed by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to investigate their structures and geometries.
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M. K. Tabatabaei,H. Ghafoori Fard,J. Koohsorkhi 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2015 NANO Vol.10 No.3
A new method for preparation of a carbon nanotube (CNT)–zinc oxide hybrid on a glass substrate at low temperature is introduced and the stability improvement of field emission of CNTs is reported. The emission current stability and substrate material are the two main commercial parameters for field emission applications of CNTs. The two alternative current (AC) and direct current (DC) plasma enhancement chemical vapor deposition (PECVD) is used to achieve low-temperature growth of vertically aligned CNTs and the hydrothermal processing is used for production of zinc oxide nanowires to improve the emission current stability and properties. The nanoscale junction between a semiconductor and conductive material are critical for electronic applications. The present study examined the field emission properties of CNTs near the crystalline structure of the zinc oxide hybrids and showed the improvement in the field enhancement factor and emission current stability of CNT–ZnO hybrid than the CNT emitters.
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