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Effect of Arrangement of Input Gates on Logic Switching Characteristics of Nanodot Array Device
JO, Mingu,KATO, Yuki,ARITA, Masashi,ONO, Yukinori,FUJIWARA, Akira,INOKAWA, Hiroshi,TAKAHASHI, Yasuo,CHOI, Jung-Bum 'Institute of Electronics, Information and Communi 2012 IEICE transactions on electronics Vol.95 No.5
Single-Electron Device With Si Nanodot Array and Multiple Input Gates
Kaizawa, T.,Arita, M.,Fujiwara, A.,Yamazaki, K.,Ono, Y.,Inokawa, H.,Takahashi, Y.,Jung-Bum Choi IEEE 2009 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.8 No.4
<P>We have developed a flexible-logic-gate single-electron device (SED) with an array of nanodots. Although the small size of SEDs is highly advantageous, the size of the nanodots inevitably fluctuates, which causes variations in device characteristics. This variability can be eliminated and high device functionality can be obtained by exploiting the oscillatory characteristics and multigate capability of SEDs. We fabricated, on a silicon-on-insulator wafer, a Si nanodot array device with two input gates and a control gate and investigated its basic operation characteristics experimentally. The device was demonstrated to operate as a logic gate providing six important logic functions ( and, or, nand, nor, xor, and xnor), which are obtained by adjusting the control-gate voltage.</P>