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RISS 인기검색어
- 검색키워드
- 저자 : Huazhen Huang (검색결과 3 건)
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Radiated disturbance characteristics of SiC MOSFET module
Huang, Huazhen,Wang, Ningyan,Wu, Jialing,Lu, Tiebing The Korean Institute of Power Electronics 2021 JOURNAL OF POWER ELECTRONICS Vol.21 No.2
Wide band gap semiconductor device silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have many advantages and are considered to be the most promising alternative to silicon (Si) insulated gate bipolar transistors (IGBTs) in low-/medium-voltage fields. However, a faster switching speed results in more serious electromagnetic disturbance problems in the application of SiC MOSFET. In this paper, an experiment system is established to measure the radiated disturbance of a single SiC MOSFET module operating at 9 kHz-300 MHz. The radiated electric fields of the SiC MOSFET module are mainly concentrated within 160 MHz. The switching voltage and radiated disturbance of the Si IGBT module are measured and compared with those of the SiC MOSFET module. The voltage of the SiC MOSFET has a faster change rate and a higher overshoot, which results in the radiated electric fields of SiC MOSFET module being 5-10 dB higher than those of the Si IGBT module below 8 MHz. The measurement results in the time-domain and frequency-domain correspond. A detailed model of a SiC MOSFET module is established and the radiated electric fields are calculated using the method of moments (MOM). The calculated results show the effectiveness of the model for radiated disturbance prediction. In this paper, the radiated electric fields of a SiC MOSFET module are measured and analyzed, and the calculation model can be used to further evaluate the radiated disturbance characteristics of SiC MOSFET and influencing factors.
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Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Junji Ke,Zhibin Zhao,Peng Sun,Huazhen Huang,James Abuogo,Xiang Cui 전력전자학회 2019 JOURNAL OF POWER ELECTRONICS Vol.19 No.4
This paper systematically investigates the influence of device parameters spread on the current distribution of paralleledsilicon carbide (SiC) MOSFETs. First, a variation coefficient is introduced and used as the evaluating norm for the parametersspread. Then a sample of 30 SiC MOSFET devices from the same batch of a well-known company is selected and tested underthe same conditions as those on datasheet. It is found that there is big difference among parameters spread. Furthermore,comprehensive theoretical and simulation analyses are carried out to study the sensitivity of the current imbalance to variationsof the device parameters. Based on the concept of the control variable method, the influence of each device parameter on thesteady-state and transient current distributions of paralleled SiC MOSFETs are verified separately by experiments. Finally, somescreening suggestions of devices or chips before parallel-connection are provided in terms of different applications and differentdriver configurations.
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Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Ke, Junji,Zhao, Zhibin,Sun, Peng,Huang, Huazhen,Abuogo, James,Cui, Xiang The Korean Institute of Power Electronics 2019 JOURNAL OF POWER ELECTRONICS Vol.19 No.4
This paper systematically investigates the influence of device parameters spread on the current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient is introduced and used as the evaluating norm for the parameters spread. Then a sample of 30 SiC MOSFET devices from the same batch of a well-known company is selected and tested under the same conditions as those on datasheet. It is found that there is big difference among parameters spread. Furthermore, comprehensive theoretical and simulation analyses are carried out to study the sensitivity of the current imbalance to variations of the device parameters. Based on the concept of the control variable method, the influence of each device parameter on the steady-state and transient current distributions of paralleled SiC MOSFETs are verified separately by experiments. Finally, some screening suggestions of devices or chips before parallel-connection are provided in terms of different applications and different driver configurations.
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