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RISS 인기검색어
- 검색키워드
- 저자 : Hosseini Shokouh, Seyed Hossein (검색결과 4 건)
- 무료
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- 유료
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Molybdenum Disulfide Nanoflake–Zinc Oxide Nanowire Hybrid Photoinverter
Hosseini Shokouh, Seyed Hossein,Pezeshki, Atiye,Raza, Syed Raza Ali,Choi, Kyunghee,Min, Sung-Wook,Jeon, Pyo Jin,Lee, Hee Sung,Im, Seongil American Chemical Society 2014 ACS NANO Vol.8 No.5
<P>We demonstrate a hybrid inverter-type nanodevice composed of a MoS<SUB>2</SUB> nanoflake field-effect transistor (FET) and ZnO nanowire Schottky diode on one substrate, aiming at a one-dimensional (1D)–two-dimensional (2D) hybrid integrated electronic circuit with multifunctional capacities of low power consumption, high gain, and photodetection. In the present work, we used a nanotransfer printing method using polydimethylsiloxane for the fabrication of patterned bottom-gate MoS<SUB>2</SUB> nanoflake FETs, so that they could be placed near the ZnO nanowire Schottky diodes that were initially fabricated. The ZnO nanowire Schottky diode and MoS<SUB>2</SUB> FET worked respectively as load and driver for a logic inverter, which exhibits a high voltage gain of ∼50 at a supply voltage of 5 V and also shows a low power consumption of less than 50 nW. Moreover, our inverter effectively operates as a photoinverter, detecting visible photons, since MoS<SUB>2</SUB> FETs appear very photosensitive, while the serially connected ZnO nanowire Schottky diode was blind to visible light. Our 1D–2D hybrid nanoinverter would be quite promising for both logic and photosensing applications due to its performance and simple device configuration as well.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2014/ancac3.2014.8.issue-5/nn501230v/production/images/medium/nn-2014-01230v_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn501230v'>ACS Electronic Supporting Info</A></P>
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Hosseini Shokouh, Seyed Hossein,Raza, Syed Raza Ali,Lee, Hee Sung,Im, Seongil The Royal Society of Chemistry 2014 Physical chemistry chemical physics Vol.16 No.31
<P>On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.</P> <P>Graphic Abstract</P><P>On a single ZnO nanowire, we fabricated bifunctional non-classical inverters coupling nanowire-based Schottky barrier transistors and adjacent Schottky diodes. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=c4cp01266f'> </P>
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Pezeshki, Atiye,Hosseini Shokouh, Seyed Hossein,Jeon, Pyo Jin,Shackery, Iman,Kim, Jin Sung,Oh, Il-Kwon,Jun, Seong Chan,Kim, Hyungjun,Im, Seongil American Chemical Society 2016 ACS NANO Vol.10 No.1
<P>Molybdenum ditelluride (alpha-MoTe2) is an emerging transition-metal dichalcogenide (TMD) semiconductor that has been attracting attention due to its favorable optical and electronic properties. Field-effect transistors (FETs) based on few-layer alpha-MoTe2 nanosheets have previously shown ambipolar behavior with strong p-type and weak n-type conduction. We have employed a direct imprinting technique following mechanical nanosheet exfoliation to fabricate high-performance complementary inverters using alpha-MoTe2 as the semiconductor for the p-channel FETs and MoS2 as the semiconductor for the n-channel FETs. To avoid ambipolar behavior and produce alpha-MoTe2 FETs with dean p-channel characteristics, we have employed the high-workfunction metal platinum for the source and drain contacts. As a result, our alpha-MoTe2 nanosheet p-channel FETs show hole mobilities up to 20 cm(2)/(V s), on/off ratios up to 105, and a subthreshold slope of 255 mV/decade. For our complementary inverters composed of few-layer alpha-MoTe2 p-channel FETs and MoS2 n-channel FETs we have obtained voltage gains as high as 33, noise margins as high as 0.38 V-DD, a switching delay of 25 mu s, and a static power consumption of a few nanowatts.</P>
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A ZnO nanowire-based photo-inverter with pulse-induced fast recovery.
Raza, Syed Raza Ali,Lee, Young Tack,Hosseini Shokouh, Seyed Hossein,Ha, Ryong,Choi, Heon-Jin,Im, Seongil RSC Pub 2013 Nanoscale Vol.5 No.22
<P>We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.</P>
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