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RISS 인기검색어
- 검색키워드
- 저자 : Hiromichi Ohashi (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
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Novel Approaches for High Power and High Speed IGBTs
Hiromichi Ohashi,Akio Nakagawa 전력전자학회 1989 ICPE(ISPE)논문집 Vol.- No.-
New approaches for high power IGBTs such as (1) self-aligned deep P-diffusl on, (2)Stripe gate source pattern, (3)Hole bypass structure, (4) Silicon wafer Direct Bonding technique and (5)Donble gate structure for lateral IGBTs are reviewed. All of these novel aporoaches make possible high power handling capability with high speed and ruggedness against SOA. These excellent IGBT feature satisfy Increasing demands for high frequency power conversion and power IC applications.
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Electric and Physical Chacteritics of a SiC-PiN Diode for High-Power Devices
Nam Oh Kim,Wan-Ki Min,Kyung-Min Sung,Kazuma Suzuki,Yasunori Tanaka,Hiromichi Ohashi 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.6
This paper is presented on a 2.5-kV silicon-carbide (SiC) PiN diode with a silicon injection enhancement gate transistor (IEGT) in an inductively loaded chopper circuit. The experimental switching characteristics of the SiC-PiN diode are presented under a DC 1200 V bias voltage and 40 A cutoff current. Experimental results show that the reverse recovery time and the IEGT turn-on loss are significantly reduced by the combination of the SiC-PiN diode and the IEGT. To reduce switching losses and investigate the limitation of the switching frequency in high power converters, we newly present the design concept of an IEGT combined with a SiC-PiN diode. The proposed design concept is evaluated based on a device simulation. The result of the device simulation yields the possible switching frequency by using the comprehensive total devices loss in the test circuit. This paper is presented on a 2.5-kV silicon-carbide (SiC) PiN diode with a silicon injection enhancement gate transistor (IEGT) in an inductively loaded chopper circuit. The experimental switching characteristics of the SiC-PiN diode are presented under a DC 1200 V bias voltage and 40 A cutoff current. Experimental results show that the reverse recovery time and the IEGT turn-on loss are significantly reduced by the combination of the SiC-PiN diode and the IEGT. To reduce switching losses and investigate the limitation of the switching frequency in high power converters, we newly present the design concept of an IEGT combined with a SiC-PiN diode. The proposed design concept is evaluated based on a device simulation. The result of the device simulation yields the possible switching frequency by using the comprehensive total devices loss in the test circuit.
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