http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : H.Gruening (검색결과 1 건)
- 무료
- 기관 내 무료
- 유료
-
H.Gruening 전력전자학회 1992 ICPE(ISPE)논문집 Vol.1992 No.4
A step by step improvement strategy for high voltage bipolar power turn-off devices is presented in this paper: For the first time it is shown that the standard drive of GTOs mainly is responsible for the current filamentation occuring at its turn-on and turn-off transients. Consequently, new, hard drive conditions are introduced and verified by experiment and 2D device simulation for the turn-on. Thus, homogeneous turn-on is achieved with a 3 kA/4.5 kV GTO for the first time, at the same time enabling a drastic reduction of the snubber components. Then, the hard driven FCTh is introduced as an ultimate end of that development line: 2.2 kV/200 A has been switched without any snubber by means of 1.6 cm2 active area, resulting in homogeneous turn-on and close to homogeneous<br/> dynamic avalanche turn-off (p_off = 275 kVA/cm2). Furthermore, very fast switching and small storage times (tr≤300 ns, ts ≤ 150 ns), excellent turn-off stability and excellent agreement with 2D device simulation form first principles (ABB-PISCES) in both, the turn-on and the turn-off transients, are reported. Thus both, a deep understanding of the GTO and the FCTh, here is presented for the first time.<br/>
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
