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Zimin, S P,Gorlachev, E S,Mokrov, D A,Amirov, I I,Naumov, V V,Gremenok, V F,Juskenas, R,Skapas, M,Kim, W Y,Bente, K,Chung, Y-D IOP 2017 Semiconductor science and technology Vol.32 No.7
<P>In this work we report a phenomenon of the self-formation of nanostructure arrays during low-energy inductively coupled argon plasma treatment of the surface of copper indium gallium diselenide films grown by different methods on glass substrates. Selenization, pulsed laser deposition and multistage co-evaporation technological methods were used for the growth of polycrystalline CuIn<SUB>1−<I>x</I> </SUB>Ga<SUB> <I>x</I> </SUB>Se<SUB>2</SUB> (0.04?≤?<I>x</I>?≤?0.45) films. The plasma treatment of the surface of the films grown by all three methods resulted in the plasma-assisted self-formation of arrays of uniform cylindrical or conical nanostructures with the surface density of (0.8–1.8)?×?10<SUP>11</SUP> cm<SUP>−2</SUP>. Using scanning electron microscopy, transmission electron microscopy and atomic force microscopy, we describe the morphological parameters and chemical composition of the fabricated nanostructures and discuss possible physical mechanisms of the observed plasma-assisted nanostructuring.</P>