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Theoretical and Experimental Study of UV Detection Characteristics of Pd/ZnO Nanorod Schottky Diodes
Shaivalini Singh,Pramod Kumar Tiwari,Hemant Kumar,Yogesh Kumar,Gopal Rawat,Sanjay Kumar,Kunal Singh,Ekta Goel,S. Jit,박시현 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2017 NANO Vol.12 No.11
In this work, we report theoretical and experimental study of Pd/ZnO nanorod (NR) Schottky diodes-based ultraviolet photodetector (UV-PD). The ZnO-NRs are deposited on indium tin oxide (ITO) coated glass substrates by using a low-temperature hydrothermal method. The surface morphology of the ZnO-NRs film is characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The SEM image shows vertically grown NRs with uniformity, and XRD shows the preferred (002) orientation of ZnO-NR films. The current–voltage characteristics of Pd/ZnO-NR Schottky diodes are studied under dark and UV light. A voltage bias from -1V to +1V is applied and the ratio of photocurrent to dark current was ( ~0.17 x 10 2 at V = 0.5V) calculated from the I–V curve. The value of responsivity was found to be 0.111A/W at λ = 365 nm and at bias = 0.50 V. An approximated UV-PD structure has also been numerically simulated using three-dimensional (3D) device simulator from Visual TCAD of Cogenda International. The simulated I–V characteristics have also been plotted under both dark and light conditions. The simulated results are found to be following the nature of experimental results.