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Rui Wu,Liudmila Smirnova,Huai Wang,Francesco Iannuzzo,Frede Blaabjerg 전력전자학회 2015 ICPE(ISPE)논문집 Vol.2015 No.6
With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.
A Busbar Integrated SiC-based Converter with Embedded Heat-pipes
Yao Chang,Amir Sajjad Bahman,Haoze Luo,Wuhua Li,Xiangning He,Francesco Iannuzzo,Frede Blaabjerg 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
In this paper, a bus-bar integrated packaging technology for press-pack power modules is proposed. The proposed packaging technology features high power-density, even pressure distribution among chips, and low stray parameters. The structure design and fabrication flow process are analyzed and experiments are made to verify the feasibility of proposed solution. The critical challenge about the package is related to thermal management. To reduce the thermal stress of chips, a heat-pipe integrated heatsink is developed and finite-element-method (FEM) simulations are used to evaluate the cooling performance of the proposed heatsink. The results demonstrate that the proposed heatsink has a relatively low cost and works effectively. It paves the way to better packaging design and more efficient thermal management method for high power devices.