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- 저자 : Didenko L. (검색결과 1 건)
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Choi, Hyun Ho,Najafov, Hikmet,Kharlamov, Nikolai,Kuznetsov, Denis V.,Didenko, Sergei I.,Cho, Kilwon,Briseno, Alejandro L.,Podzorov, Vitaly American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.39
<P>Photoinduced charge transfer between semiconductors and gate dielectrics can occur in organic field-effect transistors (OFETs) operating under illumination, leading to a pronounced bias-stress effect in devices that are normally stable while operating in the dark. Here, we report an observation of a'polarization-dependent photoinduced bias-stress effect in two' prototypical single-crystal OFETs, based on rubrene and tetraphenylbis(indolo{l,2-alpha})quinolin. We find that the decay rate of the source-drain current in these OFETs under, illumination is a periodic function of the polarization angle of incident photoexcitation with respect to the crystal axes, with a periodicity of n. The angular positions of maxima and minima of the bias-stress rate match those of the optical absorption coefficient of the corresponding crystals. The analysis of the effect shows that it stems from a charge transfer of 'hot' holes, photogenerated in the crystal within a very short thermafization length (MLT mu m) from the semiconductor-dielectric interface. The observed phenomenon is a type of intrinsic structure-property relationship, revealing how molecular packing affects parameter drift in organic transistors under illumination. We also demonstrate that a photoinduced charge transfer in OFETs can be used for recording rewritable accumulation channels with an optically defined geometry and resolution, which can be used in a number of potential applications.</P>
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