http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Fu, Dejun,Wu, Dawei,Zhang, Zhihong,Meng, Xianquan,He, Mengbing,Guo, Huaixi,Peng, Yougui,Fan, Xiangjun The Korean Vacuum Society 1998 Applied Science and Convergence Technology Vol.7 No.1
We prepared $C_3N_4$ films by rf plasma enhanced chemical vapor deposition(PCVD) and alternating $C_3N_4$/TiN composite films by dc magnetron sputtering. X-ray diffraction (XRD) and transmission electron diffraction (TED) revealed that the structure of the films is amorphous or polycrystalline, depending on deposition conditions and heat treatment. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy confirmed the presence of $sp_3\; and sp _2$ hybridized C atoms bonded with N atoms in the tetrahedral and hexagonal configurations, respectively. Graphite-free $C_3N_4$ films were obtained by PCVD under optimal conditions. To prepare well crystallized $C_3N_4$ films by magnetron sputtering, we introduced negatively biased gratings in the sputtering system. CN films deposited at grating voltages (Vg) lower than 400V are amorphous. Crystallites of cubic and $\beta$-$C_3N_4$ were formed at increased voltages.
Polarization-dependent Asymmetric Hysteresis Behavior in ZnCrO Layers
이영민,김득영,이세준,Dejun Fu 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.11
A ZnCrO layer grown on a Pt (111)/Al2O3 (0001) substrate exhibits a lattice displacement-induced ferroelectric behavior due to a modulation in the lattice translation symmetry. The top-to-bottom Pt/ZnCrO/Pt structure shows asymmetric hysteresis loops in positive and negative voltage bias regions. This is attributed to a change in the Schottky emission rate due to the nonlinear polarization of the ZnCrO barrier. The characteristics of the hysteresis loops depend on the film-textures of ZnCrO, which vary with the oxygen partial pressure during the growth stage of the ZnCrO layers. The results suggest that ZnCrO has efficacy characteristics for applications in the non-volatile resistive-switching systems.
이영민,Choeun Lee,Eunhee Shim,Eiwhan Jung,Jinyong Lee,김득영,이세준,Dejun Fu,윤형도 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.4
The effects of thermal treatments on the electrical conduction properties for the unintentionallydoped ZnO thin films were investigated. Despite the decreased carrier density in the annealed ZnO thin films, the conductivity was increased because the contribution of the effective carrier mobility to the conductivity of the unintentionally-doped ZnO thin films is greater than that of the carrier density. The resistivity exponentially decreased with increasing RTA temperature, and this result was confirmed to come from the enhanced effective carrier-mobility, which originated from the increased crystallite size in the annealed ZnO thin films.