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New Developments in Power Devices
D.Silber,B.Buchau,B.Fatemizadeh 전력전자학회 1992 ICPE(ISPE)논문집 Vol.1992 No.4
New developments for power devices concern improved switching behaviour from improved or gated p - Emitter structures, extension of MOS gated devices and Field Controlled devices for higher voltages, and the integration of smart functions. In future, also new materials (GaAs, SiC) will have to be considered.<br/>
Thermal Modelling of Power Modules
D.Silber,R.Boot,C.Reinermann 전력전자학회 1992 ICPE(ISPE)논문집 Vol.1992 No.4
Power modules and smart power devices require sophisticated thermal modelling to take into account thermal interactions, time dependent response of temperature sensors and electrical-thermal coupling. In spite of the availability of powerful software for FEM calculations, analytical methods are still useful to obtain approximations, and thermal networks allow simple combinations of electrical and thermal behaviour. For calculations of temperatures under very different load conditions, the use of system functions will be the most efficient way.<br/>
SIGNAL AND ENERGY TRANSMISSION IN HIGH VOLTAGE INTEGRATED CIRCUITS
D.Silber,A.Bodensohn,J.Korec 전력전자학회 1992 ICPE(ISPE)논문집 Vol.1992 No.4
In intelligent hybride power modules several possibilities exist for energy and signal transmission between different voltage levels. For monolithic integrated high voltage circuits, a special transistor structure has been proposed which is useful as voltage source to supply auxilary circuits and as controllable current source to perform signal transmission. The device is based on a special punch through transistor structure ( "Depleted Base Transistor " ). The device has been made on SOI-substrates performed by silicon direct bonding. The experimental results show the expected behavior.<br/>