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Properties Optimization for Perovskite Oxide Thin Films by Formation of Desired Microstructure
Xingzhao Liu,Bowan Tao,Chuangui Wu,Wanli Zhang,Yanrong Li 한국세라믹학회 2006 한국세라믹학회지 Vol.43 No.11
Perovskite oxide materials are very import interest in the obvious applicat ions, significant effort has been invested in the growth of hi ghly crystalline epitaxial perovs kiteoxide thin films in our labora tory. And the desired structure of films was formed to achieve excellent properties. Y1Ba2Cu3O7-x(YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputter-ing. Values of microwave surface resistance RS (75 K, 145 GHz, 0 T) smaller than 100 m Ω were reached over the whole area ofYBCO thin films by pre-seded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layerstructured SrTiO3 (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve alarge relative capacitance change and a small dielectric loss. Highly a-axis textured Ba 0.65Sr0.35TiO3 (BST65/35) thin films wasgrown on Pt/Ti/SiO2/Si substrate for monolithic bolometers by introducing Ba 0.65Sr0.35RuO 3 (BSR65/35) thin films as buffer layer.With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of7.6×107 C cm2 K1 was achieved at 6 V/ m bias and room temperature.
Properties Optimization for Perovskite Oxide Thin Films by Formation of Desired Microstructure
Liu, Xingzhao,Tao, Bowan,Wu, Chuangui,Zhang, Wanli,Li, Yanrong The Korean Ceramic Society 2006 한국세라믹학회지 Vol.43 No.11
Perovskite oxide materials are very important for the electronics industry, because they exhibit promising properties. With an interest in the obvious applications, significant effort has been invested in the growth of highly crystalline epitaxial perovskite oxide thin films in our laboratory. And the desired structure of films was formed to achieve excellent properties. $Y_1Ba_2Cu_3O_{7-x}$ (YBCO) superconducting thin films were simultaneously deposited on both sides of 3 inch wafer by inverted cylindrical sputtering. Values of microwave surface resistance R$_2$ (75 K, 145 GHz, 0 T) smaller than 100 m$\Omega$ were reached over the whole area of YBCO thin films by pre-seeded a self-template layer. For implementation of voltage tunable high-quality varactor, A tri-layer structured SrTiO$_3$ (STO) thin films with different tetragonal distortion degree was prepared in order to simultaneously achieve a large relative capacitance change and a small dielectric loss. Highly a-axis textured $Ba_{0.65}Sr_{0.35}TiO_3$ (BST65/35) thin films was grown on Pt/Ti/SiO$_2$/Si substrate for monolithic bolometers by introducing $Ba_{0.65}Sr_{0.35}RuO_3$ (BSR65/35) thin films as buffer layer. With the buffer layer, the leakage current density of BST65/35 thin films were greatly reduced, and the pyroelectric coefficient of $7.6\times10_{-7}$ C $cm^{-2}$ $K^{-1}$ was achieved at 6 V/$\mu$m bias and room temperature.