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저온 용액공정을 이용한 인듐갈륨 산화물(IGO) 박막트랜지스터 제조 및 특성 연구
배은진 ( Eun Jin Bae ),이진영 ( Jin Young Lee ),한승열 ( Seung Yeol Han ),ChihHungChang,류시옥 ( Si Ok Ryu ) 한국화학공학회 2011 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.49 No.5
Solution processed IGO thin films were prepared using a general chemical solution route by spin coating. The effect of the annealing temperature of IGO thin films based on the ratio of 2:1 of indium to gallium on crystallization was investigated with varying annealing temperature from 300 °C to 600 ˚C. The electronic device characteristic of IGO thin film was investigated. The solution-processed IGO TFTs annealed at 300 and 600 °C in air for 1 h exhibited good electronic performances with field effect mobilities as high as 0.34 and 3.83 cm2/V·s, respectively. The on/off ratio of the IGO TFT in this work was 10(5) with 98% transmittance.