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Optimum Ge Pro le for the High Cut-O Frequency and the DC Current Gain of an SiGe HBT for MMIC
김경해,JinheeHeo,SunghoonKim,D.Mangalaraj,JunsinYi,HoongjooLee,ByungryulRyum 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
This paper reports the effects of the Ge proles shape on the cut off frequency and the DC current gain of SiGe heterojunction bipolar transistors (HBT's). Device simulations using ATLAS/BLAZE for a SiGe HBT with a trapezoidal or a triangular Ge prole are carried out to optimize the device performance. A HBT with a 15 % triangular Ge profile shows a higher cut-o frequency and DC current gain than that with a 19 % trapezoidal Ge prole. It was observed that the cut-off frequency and DC current gain as 84 GHz and 600 respectively for the case of 15 % triangular Ge prole instead of 42 GHz and 200 which was observed for 19 % trapezoidal Ge profile.