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金舜坤,金炳台,金容福,申甲 건국대학교 1979 學術誌 Vol.23 No.1
The plant export is as not the export of machinery but machine system bearing technique and know-how. The plant export means export of equipments and techniques in need of materialization of the importers project and maintaining and enlarging the importer's business. Therefore, the plant export is the comprehensive export industry to be composed of the compound factor's, that proves very significant to both sides of importer and exporter from a view point of production method having productive function which is not the raw materials and the ultimate consumer's goods. Therefore, while the plant export has a big value added and an high productive effect, the plant export neccessitate not only the skill of a high order and accumulated experiences but also a large sun of funds. In view of the fact that the plant export have the distinquishing feature above mentioned, the six developed countries which are the united state of America, west Germany, France, Italy, Japan have occupied 70-80% of the world's plant export. Compared with it, Korea's actual records of the plant export are still in significant, in particular, the plant export's ability in fields of engineering and machinary is still in a really early stage. But the Korea's plant export contract amount had been rapidly increased to $877 millions at the end of June,1978 since exporting the textile plant of 1 million to Parkistan in 1973. Though the Korea's plant export is still under insignificant stage, the plant export might be a business with a blight future. This article, firstly, is to inquire into the meanings of plant export, a technical subject, a world's trend and plant expert strategy and supporting policy in the main Developed Countries. Secondly this article has searched the device for improvement of expert through the study of problems which Korean policies of plant export have confronted. A conclusion, writer intended to present the followings for the perspectives of export policy. Firstly, In order to enlarge the productive foundation of plants and to establish the harmonious supply system it needs to aceelate the heavy chemical industrization of domestic industries, and to promote and to specialize the main items of plant industries. Secondly, in order to improve the technology, which is lower than that of the advanced countries, it is necessary to be active in the introctuction of technology and the promotion of manufacturing level of technicians. Thirdly, plant industries being large scope in unit dealings and it's period being lengthy, it needs to enlarge the plant industries, and to specialize and to enlarge the engineering and other soft ware part. Fourthly, it needs the positive export activities through the consolidation and enlargement of supporting system as monetary, tax system and insurance. Finally, it needy the active support of the governmental level as embassies and legations for the strenghening of acceptance competition and the acceptance of large scale projects from foreign states.
CdSe 단결정에서 Cd Vacancy Defect가 Photoconductivity에 미치는 영향(II)
신영진,김승곤,민한기,정태수,서영우,박병호,이재만,유평열 순천대학교 기초과학연구소 1990 基礎科學硏究誌 Vol.1 No.-
육방정의 단결정 CdS를 같은 크기로 잘라 진공중과 공기중에서 각각 하나씩 열처리 하였다. 열처리된 시료의 광전류를 400㎚에서 1800㎚까지 측정하였다. 그 결과 적외선 소광효과로부터 모체의 결합인 이온화된 V_Cd 준위와 V_Se 준위를 알게 되었다. 온도에 따른 이동도를 Van der Pauw 방법으로 측정한 결과 150K에서 300K사이에서는 이동도가 polar 산란에 따라 감소하고 30K에서 120K사이에서는 piezoelectric 산란에 따라 감소함을 알게 되었다. A hexagonal CdS crystal was cut in half, each to be annealed either in a vacuum or air. Photocurrents were measures on the annealed samples in the wavelength range of 400㎚ to 1800㎚. From the IR quenching effect, energy levels of ionized V_Cd and V_Se due to native defect were identified. Mobility measurement as a function of temperature using van der Pauw's method shows that in the temperature range of 150K to 300K it deceases due to polar scattering, whereas in the range of 30K to 120K decreasing due to piezoelectric scattering.
CdS 단결정에서 Cd Vacancy Defect가 Photocnductivity에 미치는 영향(Ⅱ)
신영진,김승곤,민한기,정태수,서영우,박병호,이재만,유평열 全北大學校 基礎科學硏究所 1991 基礎科學 Vol.14 No.1
육방정의 단결정 CdS를 같은 크기로 잘라 진공중과 공기중에서 각각 하나씩 열처리 하였다. 열처리된 시료의 광전류를 400nm에서 1800nm까지 측정하였다. 그 결과 적외선 소광효과로부터 모체의 결합인 이온화된 V_cd 준위와 V_se 준위를 알게 되었다. 온도에 따른 이동도를 Van der Pauw 방법으로 측정한 결과 150K에서 300K 사이에서는 이동도가 polar 산란에 따라 감소하고 30K에서 120K 사이에서는 piezoelectric 산란에 따라 감소함을 알게 되었다. A hexagonal CdS crystal was cut in half, each to be annealed either in a vacuum or air. Photocurrents were measured on the annealed samples in the wavelength range of 400 nm to 1800 nm. From the IR quenching effect, energy levels of ionized V_Cd and V_Se due to native defect were identified. Mobility measurement as a function of temperature using van der Pauw's method shows that in the temperature range of 150 K to 300 K it decreases due to polar scattering, whereas in the range of 30 K to 120 K decreasing due to piezoelectric scattering.
CdSe 단결정에서 Cd Vacancy Defect가 Photoconductivity에 미치는 영향(Ⅱ)
신영진,김승곤,박병호,정태수,서영우,이재만,유평열,유기수 全北大學校 基礎科學硏究所 1991 基礎科學 Vol.14 No.2
CdSe 단결정을 진공 중에서 600℃로 1시간 동안, 공기 중에서 400℃로 30분 동안 열처리하여 광전류 스펙트럼을 가시영역에서 적외선 영역까지 측정하고 Cd 빈자리 V_Cd와 Se 빈자리 V_Se로 유효한 광전도도를 연구하였다. Van der Pauw 방법으로 Hall 효과를 측정하였다. Carrier 농도는 ∼10^17/㎤ 정도이고 이동도는 ∼3x10^2㎠/v·s 정도이다. 이동도를 온도의 함수로 측정하고 defect의 관점에서 고찰하였다. Two samples of CdSe single crystal underwent annealing, one in a vacuum at 600℃ for an hour the other in an air environment at 400℃ for a half hour. Photocurrent spectra from the samples were obtained covering a range of visible to infrared region. Effective photoconductivity was investigated in connection with the vacancies of Cd and Se. As a result of Hall effect measurements performed Van der Pauw technique on the sample we obtained 10^17/㎤ and 3x10^2㎠/v·s for carrier concentration and mobility respectively. Mobility measured as a function of temperature was discussed in terms of defect.
CdSe 단결정에서 Cd Vacancy Defect가 Photoconductivity에 미치는 영향(Ⅰ)
신영진,김승곤,박병호,정태수,서영우,이재만,유평열 全北大學校 基礎科學硏究所 1991 基礎科學 Vol.14 No.1
육방정의 CdSe를 적당한 크기로 잘라 Ga, Cd, Se 및 Cu 증기에서 각각 열처리 하였다. 이와 같이 열처리한 시료들의 광전류를 400nm에서 1800nm까지 온도의 함수로 측정하고 V_cd의 역할을 비교 연구하였다. Van der Pauw 방법을 사용해서 이동도를 온도의 함수로 측정하였다. 그결과 150 K에서 300 K까지 사이에서는 ∼T^(-3/2)에 따라 감소하고 30 K에서 150 K 사이는 이동도가 약간 증가의 경향임을 알게 되었다. A hexagonal CdSe crystal was cut into four portions, each to be annealed in a different vapor of Ga, Cd, Se or Cu at a temperature of 100℃, 750℃, 900℃, or 900℃, respectively. Photocurrents were measured as a function of temperature on the annealed samples in the wavelength range of 400 nm to 1800 nm. The role of V_Cd in the four samples was compared and studied. Mobility measurement was performed as a function of temperature using Van der Pauw's method. As a result of this, it was found that mobility decreases as T^(-3/2)in the temperature range of 150 K to 300 K, whereas having a slope of slight increase in the range of 30K to 150K.