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PRECISE SIMULATION OF THE GATE CHARGE IN POWER MOSFET
Baoxia zhou,Zhiming Chen,Shoujue Wang 전력전자학회 1995 ICPE(ISPE)논문집 Vol.1995 No.10
Errors in calculation of the gate-source capacitor's charging time in a switch-on process may occur when a characteristic simulation is performed for power MOSFETs by means of SPICE with a commonly used equivalent circuit This is related to the gate-drain capacitor's non-linear charge and discharge behavior An improved model for precise simulation of the switching process of power MOSFETs is presented in this paper The variation of the gate charges with input voltage is calculated accurately.