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Design and Investigation of Dual Dielectric Recessed-Gate AlGaN/GaN HEMT as Gas sensor Application
Ashish Raman,Soumya Prasanna Chattopadhyay,Ravi Ranjan,Naveen Kumar,Deepti Kakkar,Rajneesh Sharma 한국전기전자재료학회 2022 Transactions on Electrical and Electronic Material Vol.23 No.6
This paper presents a highly sensitive Recessed Gate/source/drain AlGaN/GaN HEMT (RG-AlGaN/GaN HEMT) based Carbon Monoxide gas sensors. Many types of Carbon Monoxide (CO) gas sensor have already been demonstrated experimentally. The deeply etched recessed gate based HEMT form highly sensitive 2DEG for small change in gate metal oxide. Copper Oxide and Cerium Oxide are used as a gate electrode in CO gas detection and these metal oxides are reactively sensitive to CO gas molecules. Because of the change in the work function of gate metal oxide due to the presence of gas deposition on it, there is the change in I off , I on , SS and V th which can be taken as sensitivity parameter for sensing the gas molecules. For a change in work function till 700meV using various steps sizes, RG-AlGaN/GaN HEMT based CO gas sensor shows highly sensitivity with respect to device characteristics parameters.
Novel Vertical GAA-AlGaN/GaN Dopingless MIS-HEMT: Proposal and Investigation
Ravi Ranjan,Nitesh Kashyap,Ashish Raman 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.4
This paper presents a gate all around (GAA) AlGaN/GaN HEMT (GAA-MIS-HEMT) with AlN as an interfacial passivation layer. Gate all around technique is used to improve the performance of device such as carrier concentration, electric field and current density at the interface of AlGaN & GaN. The enhanced control over the 2DEG due to gate all around structure helped in attaining superior performance. Al2O3 is used as a dielectric. The results of GAA-MIS-HEMT are compared with planar-MIS-HEMT, which shows that the GAA-MIS-HEMT provides better ON-state current, OFF-state current, transconductance, cutoff frequency (11 GHz) and ON-state to OFF-state current ratio (10 11 ), ON-resistance (0.9Ω-cm2 ) and subthreshold slope (63 mV/dec). All the layers of proposed structure are dopingless.
Surface Potential and Drain Current 2D Analytical Modeling of Low Power Double Gate Tunnel FET
Dhruv Garg,Girish Wadhwa,Shailendra Singh,Ashish Raman,Balwinder Raj 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.6
This submitted work presents the 2-dimensional analytical modeling of Tunnel FET’s in consideration with the inherent properties of dual modulation effect. This eff ect explains the concept of regulating both gate and also the drain terminal biasing voltage on device surface potential and hence on the tunneling drain current model, which uses the device surface potential modeling as basis of deriving the TFET current model. The model is developed using basic 2-D Poisson’s equation. This analytical model embraces both the biasing voltage effect at gate and drain terminal respectively. The results procured from the submitted work are in perfect agreement with TCAD simulations results and depletion width of various regions defi ned in TFET is accurate and can also be explained theoretically.