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Yong Xu,Chuan Liu,Amegadez, Paul Seyram K.,Gi-Seong Ryu,Huaixin Wei,Balestra, Francis,Ghibaudo, Gerard,Yong-Young Noh IEEE 2015 IEEE electron device letters Vol.36 No.10
<P>Low-frequency noise (LFN) in double-gate (DG) In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is studied to investigate the origin of performance improvement. We found that thinning down the IGZO film enhances such improvements. With 7-nm IGZO, the mobility is raised by a factor of 3.77, and the subthreshold slope is reduced to 0.17 V/decade from single-gate to DG mode. Device simulations show that bulk transport inside IGZO film emerges as the two gates field effects get coupled. The LFN results reveal a transport transition from surface to bulk and disclose the superior bulk transport that experiences slight phonon scattering with a small Hooge parameter alpha(H) = 4.44 x 10(-3), whereas the surface transport undergoes serious charge trapping with surface trap densities about 2 x 10(11) eV(-1)cm(-2).</P>