http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Analysis of frequency dispersion in amorphous In—Ga—Zn—O thin-film transistors
Ajay Bhoolokam,Manoj Nag,Adrian Chasin,Soeren Steudel,Jan Genoe,Gerwin Gelinck,Guido Groeseneken,Paul Heremans 한국정보디스플레이학회 2015 Journal of information display Vol.16 No.1
It is shown in this paper that the finite resistance of the accumulation channel in amorphous In–Ga–Zn–O thin-film transistors (a-IGZO TFTs) is the main cause of the frequency dispersion of the capacitance–voltage curves in these devices. A transmission line model, accounting for the distributed nature of channel resistance, is used to explain this. Multi-frequency analysis techniques for trap density distribution use a lumped series resistance model and attribute dispersion solely to the charging and discharging of trap states. As the resistance–capacitance (RC) time constant values of the IGZO TFTs are in the range of 10–100 μs, a distributed RC network is better suited for the measured frequency range (1 kHz–1 MHz).
Manoj Nag,Robert Muller,Soeren Steudel,Steve Smout,Ajay Bhoolokam,Kris Myny,Sarah Schols,Jan Genoe,Brian Cobb,Abhishek Kumar,Gerwin Gelinck,Yusuke Fukui,Guido Groeseneken,Paul Heremans 한국정보디스플레이학회 2015 Journal of information display Vol.16 No.2
We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the additional benefit of the reaction byproduct calcium oxide being removable through a water rinse step, thus simplifying the device integration. The Ca-reduced a-IGZO showed a sheet resistance (RSHEET) value of 0.7 k/sq., with molybdenum as the S/D metal. The corresponding a-IGZO TFTs exhibited good electrical properties, such as a field-effect mobility (μFE) of 12.0 cm2/(V s), a subthreshold slope (SS−1) of 0.4 V/decade, and an on/off current ratio (ION/OFF) above 108.