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      저자 : Abuogo James (검색결과 3 건)
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      • SCIESCOPUSKCI등재

        Machine learning approach for sorting SiC MOSFET devices for paralleling

        Abuogo, James Opondo,Zhao, Zhibin The Korean Institute of Power Electronics 2020 JOURNAL OF POWER ELECTRONICS Vol.20 No.1

        This paper presents the development of a machine learning model for sorting SiC MOSFET devices for paralleling. A multivariate linear regression model is developed and trained with device parameter data (as input) and current imbalance data (as label). Each of the training devices is successively paralleled with one reference device to generate the current imbalance (label) data. Devices with close values of current imbalance when individually paralleled with the reference device are expected to have relatively balanced current sharing when paralleled among themselves. This model is trained with 40 devices and tested with 20 devices. The model shows accuracies of 87.93% and 97.48% in predicting transient and steady state current imbalances, respectively. These accuracy values are obtained by comparing the model's prediction for the 20 testing devices with the actual current imbalance values when these devices are paralleled with a reference device. Based on current imbalance predictions made by these models, the devices are grouped into classes for paralleling applications. The selection of devices for paralleling based on predictions from these models result in a satisfactorily balanced current distribution. The model's performance at higher temperatures is also satisfactory.

      • KCI등재

        Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs

        Junji Ke,Zhibin Zhao,Peng Sun,Huazhen Huang,James Abuogo,Xiang Cui 전력전자학회 2019 JOURNAL OF POWER ELECTRONICS Vol.19 No.4

        This paper systematically investigates the influence of device parameters spread on the current distribution of paralleledsilicon carbide (SiC) MOSFETs. First, a variation coefficient is introduced and used as the evaluating norm for the parametersspread. Then a sample of 30 SiC MOSFET devices from the same batch of a well-known company is selected and tested underthe same conditions as those on datasheet. It is found that there is big difference among parameters spread. Furthermore,comprehensive theoretical and simulation analyses are carried out to study the sensitivity of the current imbalance to variationsof the device parameters. Based on the concept of the control variable method, the influence of each device parameter on thesteady-state and transient current distributions of paralleled SiC MOSFETs are verified separately by experiments. Finally, somescreening suggestions of devices or chips before parallel-connection are provided in terms of different applications and differentdriver configurations.

      • SCIESCOPUSKCI등재

        Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs

        Ke, Junji,Zhao, Zhibin,Sun, Peng,Huang, Huazhen,Abuogo, James,Cui, Xiang The Korean Institute of Power Electronics 2019 JOURNAL OF POWER ELECTRONICS Vol.19 No.4

        This paper systematically investigates the influence of device parameters spread on the current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient is introduced and used as the evaluating norm for the parameters spread. Then a sample of 30 SiC MOSFET devices from the same batch of a well-known company is selected and tested under the same conditions as those on datasheet. It is found that there is big difference among parameters spread. Furthermore, comprehensive theoretical and simulation analyses are carried out to study the sensitivity of the current imbalance to variations of the device parameters. Based on the concept of the control variable method, the influence of each device parameter on the steady-state and transient current distributions of paralleled SiC MOSFETs are verified separately by experiments. Finally, some screening suggestions of devices or chips before parallel-connection are provided in terms of different applications and different driver configurations.

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